Superior Memory Architecture

MoSys’ partitioned, parallel array memories deliver the high capacity and low power of embedded DRAM (eDRAM) with the performance and ease of use of traditional (6T) SRAM. The 1T-SRAM memory technology is based on a dynamic bit cell that achieves a considerable size and soft error immunity advantage over six-transistor SRAMs (6T-SRAMs) and other conventional SRAM and QDR SRAM cells.

High-Speed Serial I/O

Each Memory IC uses 16  full-duplex SerDes lanes with transmit and receiver circuitry capable of up to 28 Gbps data rate. Each IC supports IEEE 10, 40 and 100G standards and OIF 11, 25 and 28G standards. Advantages of serial memory include substantially fewer pin connections than HBM and QDR SRAM, low latency and data integrity.

Easy to Design In

Simplify your design with fewer chips and pin connections. Compared to other SRAM and QDR SRAM solutions, MoSys higher density reduces the number of ICs. Compared to HBM stack solutions, the SerDes I/O technology requires potentially thousands of fewer pin connections to deliver design simplicity and improved reliability.

Intelligent EFAM Pioneer

MoSys Embedded In-Memory Function Accelerating Memory represents breakthrough technology at the speed and size of the first truly intelligent Memory ICs. Now you can offload functions from your FPGA or processor to optimize system performance and improve functionality. IMFs range from fixed BURST, fixed RMW to fully programmable solutions enabling designers to customize the ideal Memory IC for their specific application.

Are You Ready For HyperSpeed

MoSys redefined the memory space when it created its BLAZAR line of EFAM Memory ICs, but now we’ve raised the bar even higher with our Programmable HyperSpeed Engine. Learn more about how these intelligent memory solutions can optimize your system’s performance.

MoSys Accelerator Engines are an FPGAs Best Friend

MoSys’ new Programmable HyperSpeed Memory ICs deliver unmatched single-chip bandwidth and latency performance. It’s time to rethink how you solve your memory scaling.