SUNNYVALE, Calif. & HAVANT, United Kingdom, Apr 21, 2003 (BUSINESS WIRE) — MoSys, Inc. (Nasdaq:MOSY), the industry’s leading provider
of high density SoC embedded memory solutions, and Xyratex Technology
Limited, a company specializing in the development and production of
storage and network technology, today announced that MoSys will
license its 1T-SRAM(R) embedded memory technology to Xyratex.

Increased speed, reliability and high performance are crucial to
the storage and networking industry and 1T-SRAM memory offers these
benefits unmatched by other memory technologies. In addition to these
advantages, Xyratex needed a solution that would allow large amounts
of memory to be embedded into SoC designs using a standard logic
process.

“MoSys’ 1T-SRAM technology enables Xyratex to reduce the component
chip count and minimize the silicon area, therefore lowering the
product cost,” said Tony Palmer, Xyratex’s vice president of
development for Integrated Systems. “Our customers expect product
innovation. Xyratex’s commitment to staying ahead of the technology
race in high-speed integrated systems coupled with our MoSys
partnership, will help to ensure our customers benefit from the latest
technologies.”

“The storage and network technology industry is an important
market and we are pleased that Xyratex has chosen our 1T-STAM memory
technology for inclusion in its products,” said Mark-Eric Jones, vice
president and general manager of Intellectual Property at MoSys. “Our
relationship with Xyratex allows MoSys to demonstrate the high
performance, density and reliability that our memory technology
provides.”

ABOUT XYRATEX

Xyratex is a storage and network technology company focused on
creating essential building blocks for data storage networks, and
technology for enabling high performance digital communication
networks and storage devices.

Xyratex is recognized for its strong technology base and
commitment to providing a highly responsive customer-focused service,
investing significantly in research and development to help customers
stay ahead in the technology race. The result is an expanding range of
long-term partnerships with many of the most influential companies in
the worldwide IT marketplace.

Founded in 1994 in an MBO from IBM, and with headquarters in the
UK, the company employs over 600 people with around a third working in
R&D. Xyratex has an established global base with R&D and operational
facilities in Europe, the United States and South East Asia. More
information on Xyratex can be found at www.xyratex.com.

ABOUT MOSYS

Founded in 1991, MoSys (Nasdaq:MOSY), develops, licenses and
markets innovative memory technologies for semiconductors. MoSys’
patented 1T-SRAM technologies offer a combination of high density, low
power consumption, high speed and low cost unmatched by other
available memory technologies. The single transistor bit cell used in
1T-SRAM memory results in the technology achieving much higher density
than traditional four or six transistor SRAMs while using the same
standard logic manufacturing processes.

1T-SRAM technologies also offer the familiar, refresh-free
interface and high performance for random address access cycles
associated with traditional SRAMs. In addition, these technologies can
reduce operating power consumption by a factor of four compared with
traditional SRAM technology, contributing to making them ideal for
embedding large memories in System on Chip (SoC) designs.

MoSys’ licensees have shipped more than 50 million chips
incorporating 1T-SRAM embedded memory technologies, demonstrating
excellent manufacturability in a wide range of silicon processes and
applications. MoSys is headquartered at 1020 Stewart Drive, Sunnyvale,
California 94085. More information is available on MoSys’ website at
http://www.mosys.com.

1T-SRAM(R) is a MoSys trademark registered in the U.S. Patent and
Trademark Office. All other trade, product, or service names
referenced in this release may be trademarks or registered trademarks
of their respective holders.