SUNNYVALE, Calif., Jan 20, 2004 (BUSINESS WIRE) — Virtual
Silicon, Inc., a leader in semiconductor intellectual property (SIP),
and MoSys, Inc. (Nasdaq:MOSY) the industry’s leading provider of high
density system-on-chip (SoC) embedded memory solutions, today
announced the formation of a partnership to collectively offer a
comprehensive low power IP solution for TSMC’s 130nm processes.
Virtual Silicon will contribute VIP(TM) PowerSaver standard cells,
interface IP (basic I/O, application specific I/O and PLL) and power
management IP. MoSys will add its new low-power, single-port and
dual-port 6T-SRAM-R(TM) compiled memories as well as MoSys’
high-density, low-power 1T-SRAM-M(TM) memory technology.

“Virtual Silicon’s strategic focus is to enable SoC designers to
solve the crisis of power at 130 and 90nm,” said Barry A. Hoberman,
president and CEO of Virtual Silicon. “Teaming up with MoSys on this
mission for memory means the customer is getting an integrated
solution from the best in class IP providers.”

“MoSys is addressing the requirements of SoC designers to reduce
power consumption in the latest generation processes while minimizing
chip cost with our innovative 1T-SRAM-M and 6T-SRAM-R memory
technologies,” said Dr. Fu-Chieh Hsu, president and CEO of MoSys. “We
are pleased to partner with Virtual Silicon to offer customers a
complete power-optimized foundation IP solution.”

This partnership also complements the power-saving efforts of
National Semiconductor which has developed low power technology mobile
electronic applications, including handsets. “Our PowerWise(TM)
technology is enabling SoC designers to greatly extend the battery
life of portable devices,” said Peter Henry, vice president of
portable power systems, National Semiconductor. “The combined
capabilities of MoSys and Virtual Silicon’s power management IP, which
is compatible with National’s PowerWise technology, places a powerful
tool in the hands of SoC designers.”

About Virtual Silicon Technology

Virtual Silicon is a leading supplier of semiconductor
intellectual property technology to manufacturers and designers of
complex systems-on-chip (SoC). Headquartered in Sunnyvale, CA, the
company provides process-specific embedded components that serve the
wireless, networking, graphics, communication and computing markets.
Customers include leading fabless semiconductor companies, integrated
semiconductor manufacturers, foundries, and SoC developers who demand
leading edge technology for their semiconductor innovations. For more
information, call 408-548-2700 or visit Virtual Silicon online at

About MoSys

Founded in 1991, MoSys (Nasdaq:MOSY), develops, licenses and
markets innovative memory technologies for semiconductors. MoSys’
patented 1T-SRAM technologies offer a combination of high density, low
power consumption, high speed and low cost unmatched by other
available memory technologies. The single transistor bit cell used in
1T-SRAM memory results in the technology achieving much higher density
than traditional four or six transistor SRAMs, while using the same
standard logic manufacturing processes.

1T-SRAM technologies also offer the familiar, refresh-free
interface and high performance for random address access cycles
associated with traditional SRAMs. In addition, these technologies can
reduce power consumption by a factor of four compared with traditional
SRAM technology, contributing to making it ideal for embedding large
memories in System on Chip (SoC) designs. MoSys’ licensees have
shipped more than 50 million chips incorporating 1T-SRAM embedded
memory, demonstrating the excellent manufacturability of the
technology in a wide range of silicon processes and applications.
MoSys is headquartered at 1020 Stewart Drive, Sunnyvale, California
94085. More information is available on MoSys’ website at

Note to Editors: 1T-SRAM(R) is a MoSys trademark registered in the
U.S. Patent and Trademark Office. All other trade, product, or service
names referenced in this release may be trademarks or registered
trademarks of their respective holders.

Your Source for IP, VIP, Silicon Ready, The Heart of Great Silicon
and Virtual Silicon are trademarks of Virtual Silicon Technology, Inc.

SOURCE: Virtual Silicon