Digital Multimedia Chip Company to Use MoSys’ Memory for Future
Cellular Rich-Multimedia Phone Products
SUNNYVALE, Calif. & BEIJING–(BUSINESS WIRE)–Feb. 17, 2004– MoSys, Inc. (Nasdaq:MOSY), the industry’s leading provider of high
density SoC embedded memory solutions and Vimicro Corporation, a
cutting-edge digital multimedia chip company, today announced the
licensing of MoSys’ 1T-SRAM(R) embedded memory technology to be
incorporated into Vimicro’s next-generation multimedia
(video/audio/graphics/music) processors for cellular phones.
“A significant consideration in cell phone design is the need for
low power and enhanced multimedia processing capabilities and we
believe that we can meet these new challenges by adopting MoSys’
1T-SRAM memory,” said Jun Zhu, vice president of Engineering of
Vimicro. “MoSys offers high-performance embedded memory technology
utilizing less power and space, thus providing an enhanced product at
a lower cost staying ahead of industry standards.”
MoSys’ 1T-SRAM technologies have already been silicon-proven in
six process generations and are in high-volume production in many
consumer and communications products.
“We are pleased to work with Vimicro to extend the use of our
1T-SRAM technology,” said Mark-Eric Jones, vice president and general
manager of intellectual property at MoSys. “By choosing our 1T-SRAM
embedded memory, Vimicro will take advantage of the industry’s highest
quality embedded memory solution.”
Founded in 1991, MoSys (Nasdaq:MOSY), develops, licenses and
markets innovative memory technologies for semiconductors. MoSys’
patented 1T-SRAM technologies offer a combination of high density, low
power consumption, high speed and low cost unmatched by other
available memory technologies. The single transistor bit cell used in
1T-SRAM memory results in the technology achieving much higher density
than traditional four or six transistor SRAMs, while using the same
standard logic manufacturing processes. 1T-SRAM technologies also
offer the familiar, refresh-free interface and high performance for
random address access cycles associated with traditional SRAMs. In
addition, these technologies can reduce operating power consumption by
a factor of four compared with traditional SRAM technology,
contributing to making it ideal for embedding large memories in System
on Chip (SoC) designs. MoSys’ licensees have shipped more than 50
million chips incorporating 1T-SRAM embedded memory, demonstrating the
excellent manufacturability of the technology in a wide range of
silicon processes and applications. MoSys is headquartered at 1020
Stewart Drive, Sunnyvale, California 94085. More information is
available on MoSys’ website at http://www.mosys.com.
Vimicro Corporation is a leading China-based semiconductor company
providing chips and solutions that enable multimedia communication and
applications for worldwide telecommunication, PC, mobile, and consumer
markets. Vimicro has strategic partnership with China Telecom, China
Netcom, China Mobile, China Unicom, Microsoft, and Fujitsu, to address
a large market in Internet and mobile multimedia applications.
Supported by Chinese Ministry of Information Industry, Vimicro is now
helping to standardize Chinese Internet and mobile multimedia
applications through its VXP technology platform. Vimicro has its
headquarter in Beijing, and subsidiaries in Shanghai, Shenzhen, Hong
Kong, and Silicon Valley.
Please visit www.vimicro.com for more information.
Note for Editors:
1T-SRAM(R) is a MoSys trademark registered in the U.S. Patent and
Trademark Office. All other trade, product, or service names
referenced in this release may be trademarks or registered trademarks
of their respective holders.
CONTACT: MoSys, Sunnyvale
K.T. Boyle , +1 408-731-1830
Sheena Shen, +86 10-68948888
Shelton PR, Dallas
Katie Olivier, +1 972-239-5119 x128
SOURCE: MoSys, Inc.