Ultra-dense memory technology drives higher integration

SUNNYVALE, CA and TAIPEI, TAIWAN (January 9, 2001) – MoSys, Inc.
and VIA Technologies, Inc. announced today that VIA has licensed
MoSys’ 1T-SRAM technology to implement ultra-dense high performance
SRAM into future products on its IC roadmap.

“MoSys’ 1T-SRAM technology delivers a unique combination
of density, performance, and power capabilities, and opens up
exciting opportunities for developing innovative new IC products
that meet the demanding performance and cost requirements of our
markets,” stated Richard Brown, Director of Marketing at
VIA Technologies, Inc.

“VIA’s innovations have contributed to the rapid pace of
development in the semiconductor market” noted Mark-Eric
Jones, vice president and general manager of intellectual property
at MoSys, Inc. “We are pleased to provide VIA with 1T-SRAM
technology as they build the ICs supporting today’s high growth


MoSys’ patented 1T-SRAM technology offers a combination of high
density, low power consumption, high speed and low cost unmatched
by other memory technologies. The single transistor bit cell used
in 1T-SRAM technology results in the technology achieving much
higher density than traditional four or six transistor SRAMs whilst
the innovative 1T-SRAM architecture allows the use of standard
logic manufacturing processes without requiring any process changes.
1T-SRAM technology also offers the familiar, refresh-free interface
and high performance for random address access cycles associated
with traditional SRAMs. In addition, this technology can reduce
operating power consumption by a factor of four compared with
traditional SRAM technology, contributing to making it an ideal
technology for embedding large memories in System on Chip (SoC)
designs. 1T-SRAM technology is in volume production both in discrete
memories available from MoSys as well as in SoC products at MoSys’


VIA Technologies, Inc. is the world’s leading fabless supplier
of PC core logic chipsets, microprocessors, and multimedia and
communications chips. VIA delivers value to the PC industry by
designing, marketing, and selling high-performance VIA Apollo
core logic chipsets for the full range of PC platforms, as well
as cost-effective VIA CyrixÒ processors
for Value PCs and Internet Appliances. Its customers include the
world’s top OEMs, mainboard manufacturers, and system integrators.

VIA is headquartered in Taipei, Taiwan, at the center of the
Greater China high-tech manufacturing engine, and has branch offices
in the US, China and Europe. The company is listed on the Taiwan
Stock Exchange (TSE2388), and achieved annual revenues of nearly
US$1 billion in 2000.


Founded in 1991, MoSys develops, licenses and markets innovative
memory technology for semiconductors. MoSys’ patented 1T-SRAM
technology offers a combination of high density, low power consumption,
high speed and low cost unmatched by other memory technologies.
MoSys provides 1T-SRAM technology as licensable intellectual property
to designers who want to efficiently embed large memories in their
System on Chip (SoC) designs and also as stand-alone memory devices
shipped in volume by MoSys. Licensees that are adopting 1T-SRAM
technology include tier one electronics, semiconductor and foundry
companies. MoSys is headquartered at 1020 Stewart Drive, Sunnyvale,
California 94085. More information is available on MoSys’ website
at https://dev-mosys-web-04-19.pantheonsite.io.


Note for Editors:

1T-SRAM is a trademark of MoSys,
Inc. All other trademarks or registered trademarks are the property
of their respective owners.