SUNNYVALE, Calif.–(BUSINESS WIRE)–July 25, 2006–MoSys, Inc.
(Nasdaq:MOSY), the industry’s leading provider of high-density
system-on-chip (SoC) embedded memory solutions, announced today the
silicon validation of MoSys’ 1T-SRAM(R) embedded memory technology
within Teknovus’ Optical Network Unit (ONU) chips, used in
Fiber-to-the-Home (FTTH) access networks. The multi-megabit, highly
integrated devices have been in volume production since June/2006, and
are manufactured using MoSys’s 1T-Q(R) advanced bit cell technology
for its embedded memory on TSMC’s 0.13-micron standard CMOS process.
The companies also announced the extension of their 1T-SRAM licensing
agreement for next generation chip set designs.

“Teknovus leadership in the GEPON chip sets comes by increasing
transport capacity, optimizing fiber infrastructure, improving
manageability, integrating services functionality, and, finally,
reducing the cost of optical access,” said David Coakley, Vice
President of Operations for Teknovus. “MoSys’ 1T-SRAM technology is a
key factor in enabling us to deliver the industry’s highest level of
integration and providing all the features needed for a single-chip.”

According to the FTTH Worldwide Market and Technology Forecast
(2006-2011) report recently released by Light Reading Inc., the total
number of homes worldwide that will be reached by next-generation
fiber-optic networks will soar from about 11 million in 2006 to about
86 million in 2011. The main services driving this growth include
HDTV, next-generation gaming, personal video and digital photography.

“We are very pleased that Teknovus has chosen to partner with us
to provide cost-effective, next-generation home gateway solutions to
the emerging and fast growing triple-play services markets in
broadband access networks, including IPTV,” mentioned Chet Silvestri,
Chief Executive Officer of MoSys. “Besides Data Communications and
Networking applications like in the Teknovus projects, our CLASSIC
Macros program also produced design wins in areas like Portable Data
Storage and Computer Peripherals last quarter.”

MoSys’ CLASSIC Macros are a family of configurable, high density,
high speed, low power memory macros using silicon-proven memory cores,
targeting pure-play semiconductor wafer foundries. MoSys launched the
CLASSIC Memory Macro program in June of 2005 and since then has
experienced strong customer acceptance. Just during last calendar
quarter, MoSys signed four new CLASSIC macro-licensing agreements —
including extensions with two existing, already in production,

About MoSys Inc.

Founded in 1991, MoSys (Nasdaq:MOSY), develops, licenses and
markets innovative memory technologies for semiconductors. MoSys’
patented 1T-SRAM technologies offer a combination of high density, low
power consumption, high speed and low cost unmatched by other
available memory technologies. The single transistor bit cell used in
1T-SRAM memory results in the technology achieving much higher density
than traditional four or six transistor SRAMs while using the same
standard logic manufacturing processes. 1T-SRAM technologies also
offer the familiar, refresh-free interface and high performance for
random address access cycles associated with traditional SRAMs. In
addition, these technologies can reduce operating power consumption by
a factor of four compared with traditional SRAM technology,
contributing to making them ideal for embedding large memories in
System on Chip (SoC) designs. MoSys’ licensees have shipped more than
100 million chips incorporating 1T-SRAM embedded memory technologies,
demonstrating excellent manufacturability in a wide range of silicon
processes and applications. MoSys is headquartered at 755 N. Mathilda
Avenue, Sunnyvale, California 94085. More information is available on
MoSys’ website at

CONTACT: MoSys, Inc., Sunnyvale
Walter Croce, 408-731-1820

SOURCE: MoSys, Inc.