TSMC is first foundry with silicon-proven ultra-dense SRAM
in pure logic process

SUNNYVALE, CA, October 11, 1999— MoSys, Inc. announced
today that it has successfully completed the development and silicon-verification
of its ultra-dense 1T-SRAM memory in a TSMC pure logic process.
A 2 Megabit macro has been ported to TSMC’s 0.25-micron standard
logic process and design rules under an agreement between the companies
to provide TSMC’s customers early access to the exceptional performance
and density of MoSys’ patented 1T-SRAM memory. This is the first
time in the industry that a single transistor based RAM has been
successfully implemented in a completely standard logic process.
When using a standard logic process, the production-proven 1T-SRAM
architecture offers complete compatibility with all existing logic
process libraries, virtual components and other IP blocks including
lower density traditional six-transistor SRAM memories.

“We are excited to be the first foundry to work with MoSys
in verifying this very dense memory architecture in a standard logic
process,” said Roger Fisher, senior director of corporate marketing,
TSMC. “This MoSys 1T-SRAM offering should help our customers
implement economic System-on-Chip products incorporating multi-megabits
of high speed memory.”

The availability of 1T-SRAM on a standard logic process allows
the integration of three times as much high-performance SRAM compared
to traditional six-transistor SRAM, with dramatic savings of operating
power consumption. By using TSMC’s standard logic process, rather
than an embedded DRAM process, 1T-SRAM can be easily integrated
with other important process modules such as flash memory or mixed
signal technology for true System-on-Chip designs.

“We are pleased to be able to offer customers our production-proven
1T-SRAM architecture, now proven in TSMC’s standard logic process,”
said Mark-Eric Jones, vice president and general manager of intellectual
property at MoSys, Inc. “1T-SRAM memory enables higher levels
of system capability by integrating larger higher-performance memory
blocks than are possible using traditional six-transistor technology.”

About 1T-SRAM

Available in densities up to 128Mbits, MoSys’ patented 1T-SRAM
uses a single transistor cell to achieve its exceptional density
while maintaining the refresh-free interface and low latency random
memory access cycle time associated with traditional six-transistor
SRAM cells. Embedded 1T-SRAM allows designers to get beyond the
density limits of six-transistor SRAMs; it also reduces much of
the circuit complexity and extra cost associated with using embedded
DRAM. 1T-SRAM memories can be fabricated in either pure logic or
embedded memory processes using as little as one ninth of the area
of traditional six-transistor SRAM cores. In addition to the exceptional
performance and density, this technology offers dramatic power consumption
savings by using under a quarter of the power of traditional SRAM
memories. 1T-SRAM technology is volume production proven in millions
of MoSys’ discrete memory devices, fabricated in an embedded DRAM
process.

Availability

MoSys’ 1T-SRAM cores are available for license from MoSys now.

About MoSys

MoSys, Inc. is the leading semiconductor technology company specializing
in innovative, high performance, random access memories including
products based on its patented 1T-SRAM technology. Founded in 1991,
the company develops and markets memory integrated circuits as well
as licenses memory technology and cores to semiconductor and systems
companies. The company¹s unique memory architecture has been proven
in the volume production of over 30 million memory devices. Licensees
that are adopting 1T-SRAM technology include tier one electronics
and semiconductor companies such as Nintendo, Analog Devices, and
NEC. The company is headquartered at 1020 Stewart Drive, Sunnyvale,
California, 94086. More information on MoSys is available at http://www.mosys.com.

TSMC’s Press Release: http://www.tsmc.com.tw

 

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Note for Editors:

1T-SRAM is a trademark of MoSys, Inc. All other trademarks or registered
trademarks are the property of their respective owners.