MoSys expands the availability of low power ultra-dense
1T-SRAM technology

TOKYO, JAPAN and SUNNYVALE, CA (December 11, 2000) – MoSys, Inc.
and Spinnaker, Systems Inc. announced today the signing of an agreement
that engages Spinnaker Systems as the Japan representative for MoSys’
1T-SRAM memory intellectual property.

In Japan the semiconductor market growth in System LSI’s is fueling
a very strong demand for embedded memories. In particular, consumer
and communications applications are demanding very dense high performance
memories with low power consumption. With Spinnaker, MoSys gains
with one of the most experienced and successful partners for distribution
of intellectual property.

“Embedded memory will continue to have the greatest economic
impact on system LSI development”, stated Yasushi Yamamoto,
Spinnaker’s Representative Director & General Manager. “With
MoSys 1T-SRAM memory, designers have access to high performance
SRAMs that are two to three times as dense as traditional SRAMs
yet consume significantly less power. As a result, in Japan, there
is already a strong and growing demand for MoSys’ 1T-SRAM memory

MoSys 1T-SRAM memory allows system architects and designers to
embed multi-megabits of memory on ICs fabricated on standard CMOS
logic processes without the need for process changes.

“For many years Spinnaker has fostered the growth of the silicon
intellectual property market by providing sales and service to Japanese
designers,” noted Mark-Eric Jones, vice president and general
manager of intellectual property at MoSys, Inc. “Therefore,
MoSys is pleased to partner with Spinnaker, to help us better serve
our Japanese customers.”


MoSys’ patented 1T-SRAM technology offers a combination of high
density, low power consumption, high speed and low cost unmatched
by other memory technologies. The single transistor bit cell used
in 1T-SRAM technology results in the technology achieving much higher
density than traditional four or six transistor SRAMs whilst the
innovative 1T-SRAM architecture allows the use of standard logic
manufacturing processes without requiring any process changes. 1T-SRAM
technology also offers the familiar, refresh-free interface and
high performance for random address access cycles associated with
traditional SRAMs. In addition, this technology can reduce operating
power consumption by a factor of four compared with traditional
SRAM technology, contributing to making it an ideal technology for
embedding large memories in System on Chip (SoC) designs. 1T-SRAM
technology is in volume production both in discrete memories available
from MoSys as well as in SoC products at MoSys’ licensees.


Spinnaker Systems is a provider of leading edge EDA tools, IP design
licenses, System-on-a-Chip (SoC) design support that users ASICs/PLDs
as platforms, and has the engineering/consulting ability to support
System Level Integration (SLI). Through Spinnaker’s SoC(System-on-Chip)
Design Center, Spinnaker helps customers with Turn-Key-Solution
for System LSIs. Spinnaker is headquartered at Hatchobori SF Bldg
5F, 3-12-8, Hatchobori, Chuo-ku, Tokyo Japan. For more information
on Spinnaker Systems, visit our website at


Founded in 1991, MoSys develops, licenses and markets innovative
memory technology for semiconductors. MoSys’ patented 1T-SRAMÔ
technology offers a combination of high density, low power consumption,
high speed and low cost unmatched by other memory technologies.
MoSys provides 1T-SRAMÔ technology
as licensable intellectual property to designers who want to efficiently
embed large memories in their System on Chip (SoC) designs and also
as stand-alone memory devices shipped in volume by MoSys. Licensees
that are adopting 1T-SRAMÔ technology
include tier one electronics, semiconductor and foundry companies.
MoSys is headquartered at 1020 Stewart Drive, Sunnyvale, California
94086. More information is available on MoSys’ website at


Note for Editors:

1T-SRAM is a trademark of MoSys,
Inc. All other trademarks or registered trademarks are the property
of their respective owners.