Ultra-dense, low-power memory technology incorporated in chips for Sony’s consumer product.

SUNNYVALE, CALIFORNIA (October 15, 2001) – MoSys, Inc. announced today that they have licensed 1T-SRAM embedded memory technology to Sony.
Integrated circuits incorporating MoSys’ 1T-SRAM embedded memory technology in a 0.18-micron standard logic process are now in volume production.
The intended use will be in Sony semiconductors used in consumer products

The high production volumes and quality requirements of this consumer market require integrated solutions that excel in yield and manufacturability.
By using a standard logic process, achieving exceptional density and incorporating redundancy to repair the memory for silicon defects, 1T-SRAM offers a higher yield solution than is possible with other embedded memory technologies.

“We are proud to be working with Sony on these highly successful personal products, said Mark-Eric Jones, Vice President and General Manager of Intellectual Property at MoSys, Inc. “By incorporating 1T-SRAM memories in multiple
high-volume highly-integrated devices, Sony is able to achieve low power consumption while obtaining the cost benefits of the high density and manufacturability of this technology.”

ABOUT 1T-SRAM



MoSys’ patented 1T-SRAM technology offers a combination of high density, low power consumption, high speed and low cost unmatched by other memory technologies.
The single transistor bit cell used in 1T-SRAM technology results in the technology achieving much higher density than traditional four or six transistor SRAMs whilst the innovative 1T-SRAM architecture allows the use of standard logic
manufacturing processes without requiring any process changes. 1T-SRAM technology also offers the familiar, refresh-free interface and high performance for random address access cycles associated with traditional SRAMs.
In addition, this technology can reduce operating power consumption by a factor of four compared with traditional SRAM technology, contributing to making it an ideal technology for embedding large memories in System on Chip (SoC) designs.
1T-SRAM technology is in volume production both in discrete memories available from MoSys as well as in SoC products at MoSys’ licensees.

 


ABOUT MOSYS



Founded in 1991, MoSys develops, licenses and markets innovative memory technology for semiconductors.
MoSys’ patented 1T-SRAM technology offers a combination of high density, low power consumption, high speed and low cost unmatched by other memory technologies.
MoSys provides 1T-SRAM technology as licensable intellectual property to designers who want to efficiently embed large memories in their System on Chip (SoC) designs and also as stand-alone memory devices shipped in volume by MoSys.
Licensees that are adopting 1T-SRAM technology include tier one electronics, semiconductor and foundry companies.
MoSys is headquartered at 1020 Stewart Drive, Sunnyvale, California 94085. More information is available on MoSys’ website at http://www.mosys.com.

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Note for Editors:

1T-SRAM® is a MoSys trademark registered in the U.S. Patent and Trademark Office.
All other trademarks or registered trademarks are the property
of their respective owners.