SUNNYVALE, Calif. & GUNMA, Japan, Dec 15, 2003 (BUSINESS WIRE) — MoSys, Inc. (Nasdaq:MOSY), the industry’s leading provider of
high density SoC embedded memory solutions and SANYO Electric Co.
Ltd., (Nasdaq:SANYY)(Tokyo Stock Exchange 1:6764) a leading
manufacturer of consumer and commercial electronic products, today
announced the licensing of MoSys’ 1T-SRAM(R) embedded memory
technology to be incorporated into Sanyo’s consumer product SoC

“With today’s requirements for larger embedded memories, together
with the needs of increased speed and lower power, SoC designers are
demanding radically new embedded memory technology. We believe that we
can meet these new challenges by adopting MoSys’ 1T-SRAM memory,” said
Toshio Suganuma, senior manager of SANYO Electric Co., Ltd.,
Semiconductor Company LSI Business Unit Design Engineering Department
2. “Sanyo has evaluated MoSys’ 1T-SRAM embedded memory technology and
selected MoSys for its performance, density and power capabilities not
available from other embedded memory technologies. By using MoSys’
1T-SRAM embedded memory, our customers will benefit from SoC die area

MoSys’ 1T-SRAM technologies have already been silicon-proven in
six process generations and are in high-volume production in many
consumer and communications products.

“We are pleased to work with Sanyo to extend the use of our
1T-SRAM technology,” said Mark-Eric Jones, vice president and general
manager of intellectual property at MoSys. “By choosing our 1T-SRAM
embedded memory, Sanyo and its customers will take advantage of the
industry’s highest quality embedded memory solution.”

Through its partnership with MoSys, Sanyo joins a growing list of
leading semiconductor companies that have aligned with MoSys to
develop high-quality integrated circuits at a competitive price.

About MoSys

Founded in 1991, MoSys (Nasdaq:MOSY), develops, licenses and
markets innovative memory technologies for semiconductors. MoSys’
patented 1T-SRAM technologies offer a combination of high density, low
power consumption, high speed and low cost unmatched by other
available memory technologies. The single transistor bit cell used in
1T-SRAM memory results in the technology achieving much higher density
than traditional four or six transistor SRAMs, while using the same
standard logic manufacturing processes. 1T-SRAM technologies also
offer the familiar, refresh-free interface and high performance for
random address access cycles associated with traditional SRAMs. In
addition, these technologies can reduce operating power consumption by
a factor of four compared with traditional SRAM technology,
contributing to making it ideal for embedding large memories in System
on Chip (SoC) designs. MoSys’ licensees have shipped more than 50
million chips incorporating 1T-SRAM embedded memory, demonstrating the
excellent manufacturability of the technology in a wide range of
silicon processes and applications. MoSys is headquartered at 1020
Stewart Drive, Sunnyvale, California 94085. More information is
available on MoSys’ website at


SANYO Semiconductor Company is part of the Component Group, within
SANYO Electric Co., Ltd. In the fiscal year 2002 (ended March 31,
2003) SANYO Semiconductor Company achieved 311 billion yen (US$2.48
Billion) with about 15,000 employees including those of their
subsidiaries. SANYO Semiconductor Company develops and manufactures
semiconductor devices and flat panel displays for leading applications
in the electric industry, such as mobile communication equipment,
PC/PC-related products and analog/digital AV equipment. SANYO
Semiconductor Company has nine manufacturing factories in Japan and
seven in the Asia-Pacific region. Sales bases for the company are
located in North America, Europe, Asia and Japan. Further information
is available at:

Note for Editors:

1T-SRAM(R) is a MoSys trademark registered in the U.S. Patent and
Trademark Office. All other trade, product, or service names
referenced in this release may be trademarks or registered trademarks
of their respective holders.

SOURCE: MoSys, Inc.