SUNNYVALE, Calif., Jan 27, 2010 (BUSINESS WIRE) — MoSys, Inc. (NASDAQ: MOSY), a leading provider of differentiated, high-density memory and high-speed interface (I/O) intellectual property (IP), today announced that ROHM Co., Ltd., a leading electronics company, has signed a major technology license agreement for MoSys’ 1T-SRAM(R) embedded memory technology. The technology license agreement will enable ROHM to design and manufacture ICs utilizing 1T-SRAM in ROHM’s fabrication facilities.
Current and future generations of advanced SoCs (System-on-Chip) require significantly higher densities of embedded memory. MoSys’ patented 1T-SRAM IP, which has the advantage of enabling designs with 3 times the density in the same area as alternative solutions, high speed, low latency random access and superior reliability, provides a very compelling solution for advanced SoC designs.
“We see the need for significantly higher densities of memory in our next generation ICs. MoSys’ 1T-SRAM provides the unique advantages of higher density and lower power consumption when compared to other memory technologies, making it ideal for use in our ICs,” said Masaru Kubo, Deputy Director, KTC Development Systems Unit of KTC LSI Development Headquarters for ROHM. “This technology licensing agreement with MoSys will provide ROHM with a competitive advantage in our key markets.”
“We are very pleased to have an industry leader like ROHM adopt our 1T-SRAM technology,” said Dave DeMaria, Vice President, Business Operations at MoSys. “By choosing our 1T-SRAM embedded memory, ROHM will be able to provide their customers with next generation ICs that deliver the performance and cost advantage that they require.”
About MoSys, Inc.
Founded in 1991, MoSys(R) (NASDAQ: MOSY) develops, markets and licenses differentiated embedded memory and high speed parallel and serial interface IP for advanced SoC designs. MoSys’ patented 1T-SRAM(R) and 1T-Flash(R) memory technologies offer a combination of high density, low power consumption, high speed and low cost advantages that are unmatched by other available memory technologies for a variety of networking, computing, storage and consumer/graphics applications. MoSys’ silicon-proven interface IP portfolio includes DDR3 PHYs, as well as SerDes IP that support data rates from 1 Gigabit per second (Gbps) to 11 Gbps, across a wide range of standards, including PCI Express, XAUI, SATA and 10G KR. MoSys IP has been production-proven in more than 225 million devices.
MoSys is headquartered in Sunnyvale, California. More information is available on MoSys’ website at http://www.mosys.com.
ROHM was established in Kyoto, Japan in 1958 and designs, manufactures and sells various types of semiconductors in consumer electronics, mobile phone and network industries, automotive electronics and other applications. ROHM’s design and manufacture teams provide high quality products to customers through its global design centers and sales networks worldwide. ROHM involves over 20,000 employees worldwide and achieved 317 Billion Yen sales in FY 2009 (year ended March 31, 2009).
For additional information, please visit the web site at http://www.rohm.com
MoSys and 1T-SRAM are registered trademarks of MoSys, Inc. The MoSys logo is a trademark of MoSys, Inc. All other trademarks mentioned herein are the intellectual property of their respective owners.
SOURCE: MoSys, Inc.
Kristine Perham, 408-731-1804