TeraChannelÒ switch fabric
to use innovative ultra-dense memory technology

– MoSys, Inc. and Power X Networks announced today that Power
X has licensed MoSys’ 1T-SRAM memory technology. With it, Power
X gains the ability to integrate multi-megabits of high performance
memory in the same IC’s as the other functions of its Intelligent
TeraChannel switch fabric.

“We are committed to providing our optical networking customers
with the highest performance and integration levels available”,
commented Bill Weir, vice president of marketing at Power X. “MoSys’
1T-SRAM technology provides us with an unmatched density and speed
advantage that translates to real customer benefits.”

With its customers experiencing an unprecedented demand for bandwidth,
Power X developed TeraChannel, its highly intelligent and scalable
low latency switch fabric architecture. Embedded 1T-SRAM memory
uniquely complements the TeraChannel architecture as it also is
available in standard low power CMOS logic processes.

“In a short time Power X has established itself as one of
the leaders in this very dynamic market” noted Mark-Eric
Jones, vice president and general manager of intellectual property
at MoSys, Inc. “We are excited to partner with Power X as
they develop and deliver the technology that supports today’s
huge growth in networking applications.”


MoSys’ patented 1T-SRAM technology offers a combination of high
density, low power consumption, high speed and low cost unmatched
by other memory technologies. The single transistor bit cell used
in 1T-SRAM technology results in the technology achieving much
higher density than traditional four or six transistor SRAMs whilst
the innovative 1T-SRAM architecture allows the use of standard
logic manufacturing processes without requiring any process changes.
1T-SRAM technology also offers the familiar, refresh-free interface
and high performance for random address access cycles associated
with traditional SRAMs. In addition, this technology can reduce
operating power consumption by a factor of four compared with
traditional SRAM technology, contributing to making it an ideal
technology for embedding large memories in System on Chip (SoC)
designs. 1T-SRAM technology is in volume production both in discrete
memories available from MoSys as well as in SoC products at MoSys’


Power X Networks is a global privately owned silicon-and-systems
vendor with main offices in Manchester, England (Power X, Ltd.)
and San Jose, Calif. (Power X Networks, Inc.). Power X was founded
in 1996 by a team of technical visionaries from ICL/Fujitsu to
develop an efficient, cost-effective, high-performance interconnect
technology capable of moving vast amounts of data between connected
devices. The resulting award-winning TeraChannel family of intelligent
switch-fabric systems addresses the optical communications and
computer markets.

Power X is also a founding member of the CSIX consortium, with
now more than For more information, contact Power X Networks at
408-456-2500 or +44-(0)-161-286-2000, or visit the company’s Web
site at www.powerxnetworks.com.


Founded in 1991, MoSys develops, licenses and markets innovative
memory technology for semiconductors. MoSys’ patented 1T-SRAM
technology offers a combination of high density, low power consumption,
high speed and low cost unmatched by other memory technologies.
MoSys provides 1T-SRAM technology as licensable intellectual property
to designers who want to efficiently embed large memories in their
System on Chip (SoC) designs and also as stand-alone memory devices
shipped in volume by MoSys. Licensees that are adopting 1T-SRAM
technology include tier one electronics, semiconductor and foundry
companies. MoSys is headquartered at 1020 Stewart Drive, Sunnyvale,
California 94085. More information is available on MoSys’ website
at https://dev-mosys-web-04-19.pantheonsite.io.


Note for Editors:

1T-SRAM is a trademark of MoSys,
Inc. All other trademarks or registered trademarks are the property
of their respective owners.