Embedded 1T-SRAM uses TSMC 0.18-micron standard logic process

SUNNYVALE, CA (October 18, 1999)— MoSys Inc. announced
today the licensing of MoSys’ patented 1T-SRAM by Pixelworks, Inc.
for use in future generation ImageProcessor chips – display controller
integrated circuits (ICs) for advanced display products. This license
continues the growing market acceptance of the ultra-high density
1T-SRAM by OEMs developing leading edge systems and consumer products.

“Pixelworks’ success is based on our ability to design and
deliver highly integrated chips that deliver exceptional performance,”
says Mike West, Pixelworks’ vice president of technology. “We
selected MoSys’ 1T-SRAM, because it delivers the exceptional SRAM
performance we require and at densities significantly ahead of any
other embedded memory.”

Pixelworks selected 1T-SRAM in TSMC¹s 0.18-micron standard logic
process to achieve cost-effective system level integration. Unique
among memory technologies, MoSys’ 1T-SRAM has been delivering exceptional
performance in the ultra-high density that Systems-on-Chip (SoCs)
require. Designers gain the technology benefits, while enjoying
the cost advantages without compromise.

Pixelworks’ ImageProcessor SoCs are single-chip display controllers
that are integrated into advanced display products
including monitors, projectors and televisions using LCD,
gas plasma and Digital Light Processing (DLP) technologies.

“Pixelworks’ advanced technology ImageProcessors are helping
to drive the rapid adoption of flat panel monitors and other advanced
display products,” says Mark-Eric Jones, vice president and
general manager of intellectual property at MoSys, Inc. “We
are pleased that 1T-SRAM technology is enabling this continuous
innovation in such critical high growth, high volume markets. MoSys
is committed to delivering the embedded memory technologies that
SoC designers, such as Pixelworks, need in order to deliver truly
revolutionary products.”


Available in densities up to 128Mbits, MoSys’ patented 1T-SRAM
technology uses a single transistor cell to achieve its exceptional
density while maintaining the refresh-free interface and low latency
random memory access cycle time associated with traditional six-transistor
SRAM cells. Embedded 1T-SRAM allows designers to get beyond the
density limits of six-transistor SRAMs; it also reduces much of
the circuit complexity and extra cost associated with using embedded
DRAM. 1T-SRAM memories can be fabricated in either pure logic or
embedded memory processes using as little as one ninth of the area
of traditional six-transistor SRAM cores. In addition to the exceptional
performance and density, this technology offers dramatic power consumption
savings by using under a quarter of the power of traditional SRAM
memories. 1T-SRAM technology is volume production proven in millions
of MoSys’ discrete memory devices.


MoSys, Inc. is the leading semiconductor technology company specializing
in innovative, high performance, random access memories including
products based on its patented 1T-SRAM technology. Founded in 1991,
the company develops and markets memory integrated circuits as well
as licenses memory technology and cores to semiconductor and systems
companies. The company¹s unique memory architecture has been proven
in the volume production of over 30 million memory devices. Licensees
that are adopting 1T-SRAM technology include tier one electronics
and semiconductor companies such as Nintendo, Analog Devices, and
NEC. The company is headquartered at 1020 Stewart Drive, Sunnyvale,
California, 94086. More information on MoSys is available at http://www.mosys.com.