Patented 1T-SRAM technology delivers SRAM (sub. 10nsec. random
performance at DRAM density
SUNNYVALE, CA and TOKYO, JAPAN, January 31, 2000— MoSys,
Inc. and NEC Corporation (NEC) (NASDAQ: NIPNY) (FTSE: 6701q.1) announced
today the licensing of MoSys’ 1T-SRAM technology for use by NEC’s
1st LSI Memory Division in high-density application-specific memories
that will notably count Nintendo’s next-generation game console
among its future applications. Details of the product will be announced
at a later time.
“NEC evaluated and licensed MoSys’ 1T-SRAM memory technology
based on its unique combination of performance, density and power
capabilities not available from other technologies,” said Kazu
Tokushige, chief manager at NEC’s 1st LSI Memory Division.
Following the March 1st 1999 licensing announcement,
the companies have been cooperating to port and silicon-validate
MoSys’ 1T-SRAM technology on NEC’s advanced fabrication processes
in a variety of configurations.
“We are pleased that NEC will extend the use of our 1T-SRAM
memory technology to stand-alone high-density application-specific
memory devices,” said Mark-Eric Jones, vice president and general
manager, intellectual property at MoSys, Inc. “This builds
on the previously announced relationship offering embedded 1T-SRAM
technology to NEC’s ASIC customers.”
Available in densities up to 128Mbits, MoSys’ patented 1T-SRAM
technology uses a single transistor cell to achieve its exceptional
density while maintaining the refresh-free interface and low latency
random memory access cycle time associated with traditional six-transistor
SRAM cells. Embedded 1T-SRAM allows designers to get beyond the
density limits of six-transistor SRAMs; it also reduces much of
the circuit complexity and extra cost associated with using embedded
DRAM. 1T-SRAM memories can be fabricated in either pure logic or
embedded memory processes using as little as one ninth of the area
of traditional six-transistor SRAM cores. In addition to the exceptional
performance and density, this technology offers dramatic power consumption
savings by using under a quarter of the power of traditional SRAM
memories. 1T-SRAM technology is volume production proven in millions
of MoSys’ discrete memory devices.
About NEC Corporation
NEC Corporation (NASDAQ: NIPNY) pioneered the concept of C&C,
the integration of Computers and Communications, and is the only
company in the world to be counted among top ranking corporations
spanning the wide range of fields essential for this vision of multimedia:
computers, communications and electronic devices. Employing in excess
of 150,000 people around the world, NEC saw net sales in fiscal
year 1997-98 amount to 4,901 billion yen (approximately US$40 billion).
For further information, please visit the NEC home page at: http://www.nec-global.com
MoSys, Inc. is the leading semiconductor technology company specializing
in innovative, high performance, random access memories based on
its patented 1T-SRAM architecture. Founded in 1991, the company
develops innovative memory technology for licensing to semiconductor
and systems companies. MoSys also uses this technology to produce
its own memory products. The company’s unique memory architecture
has been proven in the volume production of over 30 million memory
devices. Licensees that are adopting 1T-SRAM technology include
tier one electronics, semiconductor and foundry companies. The company
is headquartered at 1020 Stewart Drive, Sunnyvale, California, 94086.
More information on MoSys is available at https://dev-mosys-web-04-19.pantheonsite.io.
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Note for Editors:
1T-SRAM is a trademark of MoSys, Inc. All other trademarks
or registered trademarks are the property of their respective owners.