Patented 1T-SRAM technology delivers SRAM performance at DRAM
density

SUNNYVALE, CA and TOKYO, JAPAN, October 25, 1999— MoSys,
Inc. and NEC Corporation (NEC) (NASDAQ: NIPNY) (FTSE: 6701q.1) announced
today that the significant order from Nintendo for advanced semiconductor
devices to be used in its next generation video games console, to
be built at NEC’s world-leading “No. 9” Kyushu plant,
will use MoSys’ high-performance 1T-SRAM memory technology.

“NEC evaluated and licensed MoSys’ embedded 1T-SRAM memory
technology based on its unique combination of performance, density
and power capabilities not available from other SRAM technologies,”
said Tom Nukiyama, senior manager at NEC¹’ 3rd System
LSI division. “Our ASIC customers now have an exciting new
solution for SoC designs requiring large quantities of high-performance
embedded memory.”

Following the March 1st 1999 licensing announcement,
the companies have been cooperating to port and silicon-validate
MoSys’ embedded 1T-SRAM technology on NEC’s advanced fabrication
processes in a variety of configurations.

“We are pleased that NEC will use our 1T-SRAM embedded memory
technology at this world-leading new semiconductor plant,”
said Mark-Eric Jones, vice president and general manager, intellectual
property at MoSys, Inc. “This combination of our unique memory
architecture and NEC’s most advanced semiconductor fabrication technology
provides SoC designers with tremendous capability for their next
generation of highly-integrated products.”

About 1T-SRAM

Available in densities up to 128Mbits, MoSys’ patented 1T-SRAM
technology uses a single transistor cell to achieve its exceptional
density while maintaining the refresh-free interface and low latency
random memory access cycle time associated with traditional six-transistor
SRAM cells. Embedded 1T-SRAM allows designers to get beyond the
density limits of six-transistor SRAMs; it also reduces much of
the circuit complexity and extra cost associated with using embedded
DRAM. 1T-SRAM memories can be fabricated in either pure logic or
embedded memory processes using as little as one ninth of the area
of traditional six-transistor SRAM cores. In addition to the exceptional
performance and density, this technology offers dramatic power consumption
savings by using under a quarter of the power of traditional SRAM
memories. 1T-SRAM technology is volume production proven in millions
of MoSys’ discrete memory devices.

About NEC Corporation

NEC Corporation (NASDAQ: NIPNY) pioneered the concept of C&C,
the integration of Computers and Communications, and is the only
company in the world to be counted among top ranking corporations
spanning the wide range of fields essential for this vision of multimedia:
computers, communications and electronic devices. Employing in excess
of 150,000 people around the world, NEC saw net sales in fiscal
year 1997-98 amount to 4,901 billion yen (approximately US$40 billion).
For further information, visit the NEC home page at:
http://www.nec-global.com

About MoSys

MoSys, Inc. is the leading semiconductor technology company specializing
in innovative, high performance, random access memories including
products based on its patented 1T-SRAM technology. Founded in 1991,
the company develops and markets memory integrated circuits as well
as licenses memory technology and cores to semiconductor and systems
companies. The company’s unique memory architecture has been proven
in the volume production of over 30 million memory devices. Licensees
that are adopting 1T-SRAM technology include tier one electronics,
semiconductor and foundry companies. The company is headquartered
at 1020 Stewart Drive, Sunnyvale, California, 94086. More information
on MoSys is available at: http://www.mosys.com.

NEC’s Press Release: http://www.nec-global.com