SUNNYVALE, Calif.–(BUSINESS WIRE)–March 24, 2005–MoSys, Inc.
(Nasdaq:MOSY), the industry’s leading provider of high-density
system-on-chip (SoC) embedded memory solutions announced today the
renewal of the existing partnership with NEC Electronics to
incorporate MoSys’ 1T-SRAM(R) technologies into high volume
semiconductor devices for consumer applications manufactured on NEC
Electronics’ 90nm process generation.

“Since the commencement of our original licensing agreement in
March 1999, NEC Electronics has successfully deployed MoSys’ 1T-SRAM
because of its unique combination of performance, density and power
capabilities not available from any other competing memory
technologies,” said Tom Nukiyama, senior technical director at NEC
Electronics America. “We now look to extend our relationship with
MoSys to jointly offer our ASIC customers requiring large quantities
of high-performance embedded memory a compelling solution to enhance
their consumer electronics SoC designs. The manufacturability of
1T-SRAM memory makes it the ideal technology for reducing costs and
increasing quality, which is why, at the end of the day, we see it as
the ultimate drop-in memory solution.”

“We are pleased that NEC Electronics will continue to use our
1T-SRAM embedded memory technologies on even more aggressive
processes,” said Karen Lamar, vice president of Sales and Marketing at
MoSys, Inc. “This combination of our unique memory architecture and
NEC Electronics’ most advanced semiconductor fabrication technology
provides SoC designers with tremendous capability for their next
generation of highly-integrated products.”

About MoSys

Founded in 1991, MoSys (Nasdaq:MOSY), develops, licenses and
markets innovative memory technologies for semiconductors. MoSys’
patented 1T-SRAM technologies offer a combination of high density, low
power consumption, high speed and low cost unmatched by other
available memory technologies. The single transistor bit cell used in
1T-SRAM memory results in the technology achieving much higher density
than traditional four or six transistor SRAMs while using the same
standard logic manufacturing processes. 1T-SRAM technologies also
offer the familiar, refresh-free interface and high performance for
random address access cycles associated with traditional SRAMs. In
addition, these technologies can reduce operating power consumption by
a factor of four compared with traditional SRAM technology,
contributing to making them ideal for embedding large memories in
System on Chip (SoC) designs. MoSys’ licensees have shipped more than
80 million chips incorporating 1T-SRAM embedded memory technologies,
demonstrating excellent manufacturability in a wide range of silicon
processes and applications. MoSys is headquartered at 1020 Stewart
Drive, Sunnyvale, California 94085. More information is available on
MoSys’ website at

Forward-Looking Statements

This press release may contain forward-looking statements about
the Company including, without limitation, benefits and performance
expected from use of the Company’s 1T-SRAM technology.

Forward-looking statements are based on certain assumptions and
expectations of future events that are subject to risks and
uncertainties. Actual results and trends may differ materially from
historical results or those projected in any such forward-looking
statements depending on a variety of factors. These factors include
but are not limited to, customer acceptance of our 1T-SRAM
technologies, the timing and nature of customer requests for our
services under existing license agreements, the timing of customer
acceptance of our work under such agreements, the level of commercial
success of licensees’ products such as cell phone hand sets, ease of
manufacturing and yields of devices incorporating our 1T-SRAM, our
ability to enhance the 1T-SRAM technology or develop new technologies,
the level of intellectual property protection provided by our patents,
the vigor and growth of markets served by our licensees and customers
and operations of the Company and other risks identified in the
Company’s most recent annual report on Form 10-K filed with the
Securities and Exchange Commission, as well as other reports that
MoSys files from time to time with the Securities and Exchange
Commission. MoSys undertakes no obligation to update publicly any
forward-looking statement for any reason, except as required by law,
even as new information becomes available or other events occur in the

1T-SRAM(R) is a MoSys trademark registered in the U.S. Patent and
Trademark Office. All other trade, product, or service names
referenced in this release may be trademarks or registered trademarks
of their respective holders.

CONTACT: MoSys(R), Sunnyvale
Walter Croce, 408-731-1820
Shelton PR
Katie Olivier, 972-239-5119 x128

SOURCE: MoSys, Inc.