SUNNYVALE, Calif.–(BUSINESS WIRE)–Oct. 11, 2005–MoSys, Inc.
(Nasdaq:MOSY), the industry’s leading provider of high-density
system-on-chip (SoC) embedded memory solutions, announced today the
silicon validation of MoSys’ 1T-SRAM(R) high-density, high-performance
embedded memory technology within Azul System’s Vega multiprocessor.
The device is now in volume production using 1T-SRAM(R) technology for
its embedded memory.
“Azul Compute Appliances are designed to meet today’s requirements
for a highly-reliable, on demand compute resource,” says Scott
Sellers, vice president of hardware engineering and CTO at Azul
Systems. “We chose MoSys’ 1T-SRAM embedded memory technology with
redundancy, built-in error checking and error correction features
along with its high-performance capabilities which allow our products
to deliver the enterprise class reliability, availability, and
serviceability needs of our customers.”
“Azul Systems is a recognized industry leader in the emerging
networked attached processing market and we are very pleased that they
have selected 1T-SRAM technology for their embedded high-density
memory needs,” said Chet Silvestri, chief executive officer of MoSys.
“By meeting their demanding reliability and performance requirements,
MoSys sets a very high standard in providing memory products
addressing mission critical, yet affordable system solutions.”
About MoSys, Inc.
Founded in 1991, MoSys (Nasdaq:MOSY), develops, licenses and
markets innovative memory technologies for semiconductors. MoSys’
patented 1T-SRAM technologies offer a combination of high density, low
power consumption, high speed and low cost unmatched by other
available memory technologies. The single transistor bit cell used in
1T-SRAM memory results in the technology achieving much higher density
than traditional four or six transistor SRAMs while using the same
standard logic manufacturing processes. 1T-SRAM technologies also
offer the familiar, refresh-free interface and high performance for
random address access cycles associated with traditional SRAMs. In
addition, these technologies can reduce operating power consumption by
a factor of four compared with traditional SRAM technology,
contributing to making them ideal for embedding large memories in
System on Chip (SoC) designs. MoSys’ licensees have shipped more than
98 million chips incorporating 1T-SRAM embedded memory technologies,
demonstrating excellent manufacturability in a wide range of silicon
processes and applications. MoSys is headquartered at 755 N. Mathilda
Avenue, Sunnyvale, California 94085. More information is available on
MoSys’ website at https://dev-mosys-web-04-19.pantheonsite.io.
CONTACT: MoSys, Inc., Sunnyvale
Walter Croce, 408-731-1820
Shelton PR, Dallas
Katie Olivier, 972-239-5119 x128
SOURCE: MoSys, Inc.