SUNNYVALE, Calif., Jul 01, 2010 (BUSINESS WIRE) —
MoSys, Inc. (NASDAQ: MOSY):
Michael Miller, VP of Technology Innovation & Systems Applications at MoSys, Inc., has written a white paper entitled, “Breaking the 2 Giga Access Barrier: Overcoming Limited I/O Pin Counts,” which is now available on Light Reading‘s website.
|MoSys, Inc. – a leading provider of high bandwidth serial chip-to-chip communications solutions for next generation networking systems and advanced system-on-chip (SoC) designs.|
|The white paper examines what networks and network equipment will require to accommodate Internet traffic’s projected growth to 1 Zettabyte (1 trillion Gigabytes) per year. MoSys poses a solution that accelerates access to packet forwarding information, statistical calculations and packet storage.|
MoSys’ white paper is available on Light Reading‘s website at: http://www.lightreading.com/library.asp?show_type=wp&view_type=browse.
It is also available on MoSys’ website at http://www.mosys.com/download.php.
The white paper is available through July 31, 2010 on Light Reading‘s website.
About MoSys, Inc.
MoSys, Inc. (NASDAQ: MOSY) develops serial chip-to-chip communications solutions that deliver unparalleled bandwidth performance for next generation networking systems and advanced system-on-chip (SoC) designs. MoSys’ IP portfolio includes DDR3 PHYs and SerDes IP that support data rates from 1 – 11 Gigabits per second (Gbps) across a variety of standards. In addition, MoSys offers its flagship, patented 1T-SRAM(R) and 1T-Flash(R) memory cores, which offer a combination of high-density, low power consumption, high speed and low cost advantages for high-performance networking, computing, storage and consumer/graphics applications. MoSys IP is production-proven in more than 225 million devices. MoSys is headquartered in Sunnyvale, California. More information is available on MoSys’ website at http://www.mosys.com.
MoSys, 1T-SRAM and 1T-Flash are registered trademarks of MoSys, Inc. The MoSys logo is a trademark of MoSys, Inc. All other trademarks mentioned herein are the intellectual property of their respective owners.
SOURCE: MoSys, Inc.