Low-cost, single-use licensing helps proliferate 1T-SRAM technology ]

SUNNYVALE, CALIFORNIA (August 13, 2001) – Today, MoSys, Inc. (NASDAQ: MOSY) announced the availability of a family of standard 1T-SRAM memory macros using silicon-proven 0.25-micron and 0.18-micron cores.
Through this extension to MoSys’ current offering of custom-designed embedded memory products, customers now have the added convenience of off-the-shelf 1T-SRAM memory macros in common sizes and configurations for rapid integration into their products.

Available in 1- and 2-Megabit sizes and both high speed and low power configurations, customers can also select from different memory bus widths as well as read and write timing interfaces, delivering the high density advantages of custom 1T-SRAM macro design with the time-to-market advantages normally only possible for compiled macros.
A total of 36 different macro configurations are available.

“Since we launched our 1T-SRAM licensing program, we have experienced tremendous market interest and demand for MoSys’ 1T-SRAM technology,” noted Mark-Eric Jones, vice president and general manager of intellectual property at MoSys.
“By offering these standard off-the-shelf memory configurations in addition to custom 1T-SRAM development, our customers can achieve additional savings on development time and cost.”

These standard macros are licensed on a low-cost, single project use basis while allowing customers to use multiple instances in their designs to achieve larger on-chip memories.
Deliverables include datasheet, simulation models, timing model, layout phantoms, GDS2 database and test documentation.

“In less than two years, MoSys’ 1T-SRAM embedded memories have entered volume production in products from leading semiconductor companies”, noted Bob Merritt of Semico Research Corporation.
“These standard macros should accelerate the rapid proliferation of this technology into many more SoC designs”

For customers with embedded memory requirements outside of the scope of the standard macro library, including projects in advanced deep sub-micron processes such as 0.15-micron and 0.13-micron, MoSys continues to provide its customized embedded 1T-SRAM memory macros.

Price and Availability

MoSys 1T-SRAM standard macros are available now with license fees starting from one hundred thousand dollars. Delivery times are two to four weeks.


Founded in 1991, MoSys develops, licenses and markets innovative memory technology for semiconductors. MoSys’ patented 1T-SRAM technology offers a combination of high density, low power consumption, high speed and low cost unmatched by other available memory technologies.
The single transistor bit cell used in 1T-SRAM technology results in the technology achieving much higher density than traditional four or six transistor SRAMs while using the same standard logic manufacturing processes.
1T-SRAM technology also offers the familiar, refresh-free interface and high performance for random address access cycles associated with traditional SRAMs.
In addition, this technology can reduce operating power consumption by a factor of four compared with traditional SRAM technology, contributing to making it an ideal technology for embedding large memories in System on Chip (SoC) designs.
1T-SRAM technology is in volume production both in SoC products at MoSys’ licensees as well as in MoSys standalone memories.
MoSys is headquartered at 1020 Stewart Drive, Sunnyvale, California 94085. More information is available on MoSys’ website at http://www.mosys.com.


Note for Editors:

1T-SRAM is a trademark of MoSys,
Inc. All other trademarks or registered trademarks are the property
of their respective owners.