SUNNYVALE, Calif., Jun 13, 2005 (BUSINESS WIRE) — MoSys, Inc. (NASDAQ: MOSY), the industry’s leading
provider of high-density system-on-chip (SoC) embedded memory
solutions announced today the availability of 1T-SRAM(R) “CLASSIC
Memory Macros” – a family of pre-configured, high density, high speed,
low power memory macros using silicon-proven 0.13 micron cores. By
offering this set of macros in addition to its custom-designed
embedded memory products, MoSys’ customers now have the advantage of
off-the-shelf, silicon-proven 1T-SRAM memory for rapid integration of
high-density embedded memory into their SoC designs.

MoSys’ CLASSIC Macros are available in both high speed and low
power configurations, targeted at applications including performance
computing, high-throughput data networking, portable mass storage as
well as high volume consumer entertainment and wireless personal
communications. High speed CLASSIC macros are available in 1 Megabit
configurations with 32bit, 64bit or 128bit bus widths. Speeds of up to
266 MHz are supported. The low-power CLASSIC macros are available in
1Megabit, 2Megabit or 4 Megabit configurations, all with 32-bit bus
widths. The low power offerings can operate at frequencies up to 133
MHz and feature standby power of less than 80 micro Amps per Megabit.
All CLASSIC macros employ MoSys’ patented TEC(R) technology resulting
in higher yields, greater reliability and lower soft-error rates.

“Since its introduction, MoSys’ 1T-SRAM technology has enabled
designers to achieve significant performance advantages and cost
savings,” said Karen Lamar, vice president of sales and marketing at
MoSys. “By taking advantage of MoSys’ pre-configured CLASSIC macro
offerings, our customers now enjoy shorter design cycles and reduced
development costs, while still retaining all of the performance
benefits they have come to expect when using MoSys’ technology.”

MoSys’ CLASSIC macros are licensed on single project use basis,
while allowing customers to use multiple instances in their designs to
achieve larger on-chip memory sizes. CLASSIC macros are targeted for
use with multiple foundries including Chartered, SMIC and TSMC,
initially on the 0.13-micron process node. CLASSIC macro deliverables
include datasheets, simulation and timing models, layout phantoms,
GDSII databases and test documentation.

“With the new CLASSIC macros line, MoSys is offering its customers
immediate access to the best combination of high-density, configurable
bandwidth and low power in an embedded SRAM memory solution. Through
use of its proprietary 1T-Q (single transistor, quad density) bit cell
instantiated in CLASSIC pre-configured macros, MoSys delivers truly
compelling embedded SRAM memory solutions for immediate use as a
drop-in replacement for larger, less-power optimized embedded SRAMs.
With CLASSIC macros onboard their consumer and communications SoCs,
MoSys’ customers greatly accelerate their time to market while saving
engineering development costs, particularly for SoC designs with
increasingly aggressive market windows,” said Rich Wawrzyniak, senior
ASICs & SoC analyst with Semico Research. “MoSys’ CLASSIC macros
family greatly benefits fabless companies that do not have the capital
resources or longer SoC design windows required to invest in a fully
customizable 1T-SRAM solution. CLASSIC macros enable MoSys’ customers
to get the best bang for their buck by getting to market faster with
optimal performance and significant cost savings.”

For customers with embedded memory requirements outside the scope
of the CLASSIC macros, including projects in advanced deep sub-micron
processes such as 90 nanometers, MoSys continues to provide its
customized embedded 1T-SRAM memory macros.

Price and Availability

MoSys 0.13-micron 1T-SRAM CLASSIC macros are available now with
pricing on request. Silicon characterization reports will be available
by September 2005.

ABOUT MOSYS

Founded in 1991, MoSys (NASDAQ: MOSY), develops, licenses and
markets innovative memory technologies for semiconductors. MoSys’
patented 1T-SRAM technologies offer a combination of high density, low
power consumption, high speed and low cost unmatched by other
available memory technologies. The single transistor bit cell used in
1T-SRAM memory results in the technology achieving much higher density
than traditional four or six transistor SRAMs while using the same
standard logic manufacturing processes. 1T-SRAM technologies also
offer the familiar, refresh-free interface and high performance for
random address access cycles associated with traditional SRAMs. In
addition, these technologies can reduce operating power consumption by
a factor of four compared with traditional SRAM technology,
contributing to making them ideal for embedding large memories in
System on Chip (SoC) designs. MoSys’ licensees have shipped more than
80 million chips incorporating 1T-SRAM embedded memory technologies,
demonstrating excellent manufacturability in a wide range of silicon
processes and applications. MoSys is headquartered at 1020 Stewart
Drive, Sunnyvale, California 94085. More information is available on
MoSys’ website at http://www.mosys.com.

FORWARD LOOKING STATEMENTS

This press release may contain forward-looking statements about
the Company including, without limitation, benefits and performance
expected from use of the Company’s 1T-SRAM technology.

Forward-looking statements are based on certain assumptions and
expectations of future events that are subject to risks and
uncertainties. Actual results and trends may differ materially from
historical results or those projected in any such forward-looking
statements depending on a variety of factors. These factors include
but are not limited to, customer acceptance of our 1T-SRAM
technologies, the timing and nature of customer requests for our
services under existing license agreements, the timing of customer
acceptance of our work under such agreements, the level of commercial
success of licensees’ products such as cell phone hand sets, ease of
manufacturing and yields of devices incorporating our 1T-SRAM, our
ability to enhance the 1T-SRAM technology or develop new technologies,
the level of intellectual property protection provided by our patents,
the vigor and growth of markets served by our licensees and customers
and operations of the Company and other risks identified in the
Company’s most recent annual report on Form 10-K filed with the
Securities and Exchange Commission, as well as other reports that
MoSys files from time to time with the Securities and Exchange
Commission. MoSys undertakes no obligation to update publicly any
forward-looking statement for any reason, except as required by law,
even as new information becomes available or other events occur in the
future.

1T-SRAM(R) is a MoSys trademark registered in the U.S. Patent and
Trademark Office. All other trade, product, or service names
referenced in this release may be trademarks or registered trademarks
of their respective holders.

SOURCE: MoSys, Inc.

MoSys, Inc., Sunnyvale
Walter Croce, 408-731-1820
wcroce@mosys.com
or
Shelton PR, Dallas
Katie Olivier, 972-239-5119 x128
kolivier@sheltongroup.com