Customers benefit from Transparent Error Correction for
increasing quality, and elimination of laser repair

MoSys, Inc. (Nasdaq:MOSY), the industry’s leading provider of high
density embedded memory solutions, and Semiconductor Manufacturing
International Corporation (SMIC; SEC: SMI; HKSE: 981), China’s first
advanced open-IC foundry, announced that MoSys’ 1T-SRAM-R(R)
technology incorporating Transparent Error Correction(TM) (TEC(TM)) is
silicon-proven in SMIC’s 0.13 micron logic process. This extends the
existing cooperation between the companies as an additional optimized
high-density memory solution available to SMIC’s foundry customers.

“SMIC’s silicon verification of MoSys’ 0.13um 1T-SRAM-R memory
gives our customers access to high-density memory technology that has
been verified on SMIC’s latest standard logic process,” stated James
Sung, vice president of sales and marketing at SMIC. “The 0.13-micron
1T-SRAM-R offering not only help our customers realize additional
product cost savings through TEC; they also significantly reduce
design risk and enhance our customer’s ability to create complex SoC
designs using MoSys’ unique memory architecture.”

“Our 1T-SRAM-R embedded memory technology continues to demonstrate
its exceptional scalability and portability, while improving yields,
Soft Error Rate (SER) and reliability through built in Transparent
Error Correction,” commented Fu-Chieh Hsu, president and CEO of MoSys.
“MoSys’ 1T-SRAM-R memory, provides their customers with access to
high-density 0.13-micron memory technology and delivers the added
benefit of simplifying production flow by eliminating laser repair.”


SMIC is one of the leading semiconductor foundries in the world.
As a foundry, SMIC provides integrated circuit (IC) manufacturing at
0.35-micron to 0.13-micron technologies. Established in April 2000,
SMIC, a Cayman Islands company, operates three 8-inch wafer
fabrication facilities in the Zhangjiang High-Tech Park in Shanghai,
and an 8-inch wafer fabrication facility in Tianjin, China. In
addition, SMIC is currently constructing 12-inch wafer fabrication
facilities in Beijing, China. SMIC’s Fab 1 was named one of two “Top
Fabs of the Year 2003” by Semiconductor International, a leading
industry publication in May 2003. In addition to IC manufacturing,
SMIC provides customers with a full range of services, including
design services, mask manufacturing and wafer probe test. For more
information, please visit


Founded in 1991, MoSys (Nasdaq:MOSY), develops, licenses and
markets innovative memory technologies for semiconductors. MoSys’
patented 1T-SRAM technologies offer a combination of high density, low
power consumption, high speed and low cost unmatched by other
available memory technologies. The single transistor bit cell used in
1T-SRAM memory results in the technology achieving much higher density
than traditional four or six transistor SRAMs, while using the same
standard logic manufacturing processes. 1T-SRAM technologies also
offer the familiar, refresh-free interface and high performance for
random address access cycles associated with traditional SRAMs. In
addition, these technologies can reduce power consumption by a factor
of four compared with traditional SRAM technology, contributing to
making it ideal for embedding large memories in System on Chip (SoC)
designs. MoSys’ licensees have shipped more than 50 million chips
incorporating 1T-SRAM embedded memories, demonstrating the excellent
manufacturability of the technology in a wide range of silicon
processes and applications. MoSys is headquartered at 1020 Stewart
Drive, Sunnyvale, California 94085. More information is available on
MoSys’ website at

1T-SRAM(R) is a MoSys trademark registered in the U.S. Patent and
Trademark Office. All other trade, product, or service names
referenced in this release may be trademarks or registered trademarks
of their respective holders.

CONTACT: MoSys, Sunnyvale
Public Relations
K.T. Boyle, 408-731-1830
SMIC Public Relations, Shanghai, China
Sarina Huang, +86 21 5080 2000 x 10356

SOURCE: MoSys, Inc.