SUNNYVALE, CALIFORNIA (April 15, 2002) – MoSys (Nasdaq:MOSY – news) today announced that Bill Lev, the company’s North American Manager of Intellectual Property, will participate in a session titled: “Designing with Silicon – the Latest Technology and Techniques” at the 2002 Gigabit Ethernet West Conference. Lev and other industry executives will discuss new memory types and embedded memory that will be needed to meet increasing performance requirements of gigabit Ethernet SoC designs. Lev’s presentation will focus on the effects of embedded memory on gigabit networking system reliability.
Thursday, April 18
2:00pm – 4:00 pm PT
Santa Clara Convention Center
Santa Clara, California
For more information on the conference, please visit: www.ethernetexchange.com.
For more information regarding MoSys, please visit the company’s website at:
Founded in 1991, MoSys develops, licenses and markets innovative memory technology for semiconductors. MoSys’ patented 1T-SRAM technology offers a combination of high density, low power consumption, high speed and low cost unmatched by other available memory technologies. The single transistor bit cell used in 1T-SRAM technology results in the technology achieving much higher density than traditional four or six transistor SRAMs while using the same standard logic manufacturing processes. 1T-SRAM technology also offers the familiar, refresh-free interface and high performance for random address access cycles associated with traditional SRAMs. In addition, this technology can reduce operating power consumption by a factor of four compared with traditional SRAM technology, contributing to making it an ideal technology for embedding large memories in System-on-Chip (SoC) designs. 1T-SRAM technology is in volume production both in SoC products at MoSys’ licensees as well as in MoSys’ standalone memories. MoSys is headquartered at 1020 Stewart Drive, Sunnyvale, California 94085. More information is available on MoSys’website at www.mosys.com.