SUNNYVALE, CALIFORNIA (March 12, 2002) – MoSys (NASDAQ:MOSY) announced that Mark-Eric Jones, the company’s vice president Intellectual Property, will participate in a panel discussion with other industry executives at the 2002 Semico Summit today, to discuss new memory types and embedded memory that will be needed to meet increasing performance requirements of SoC designs.

WHEN/WHERE:

Tuesday, March 12, 10:55-12:10

Camelback Inn, Scottsdale Arizona

Video tapes of this panel will also be available. Please contact K.T. Boyle, MoSys, at kboyle@mosys.com.

For more information on the conference please visit: www.semico.com.

For more information regarding MoSys, please visit the company’s website at:
www.mosys.com.

ABOUT MOSYS

Founded in 1991, MoSys develops, licenses and markets innovative memory technology for semiconductors. MoSys’ patented 1T-SRAM technology offers a combination of high density, low power consumption, high speed and low cost unmatched by other available memory technologies. The single transistor bit cell used in 1T-SRAM technology results in the technology achieving much higher density than traditional four or six transistor SRAMs while using the same standard logic manufacturing processes. 1T-SRAM technology also offers the familiar, refresh-free interface and high performance for random address access cycles associated with traditional SRAMs. In addition, this technology can reduce operating power consumption by a factor of four compared with traditional SRAM technology, contributing to making it an ideal technology for embedding large memories in System-on-Chip (SoC) designs. 1T-SRAM technology is in volume production both in SoC products at MoSys’ licensees as well as in MoSys’ standalone memories. MoSys is headquartered at 1020 Stewart Drive, Sunnyvale, California 94085. More information is available on MoSys’ website at www.mosys.com.