SUNNYVALE, Calif.–(BUSINESS WIRE)–Oct. 10, 2007–MoSys, Inc.,
(NASDAQ: MOSY), a leading provider of high-density system-on-chip
(SoC) memory and analog/mixed-signal intellectual property (IP), today
announced it would release its third quarter 2007 financial results
for the period ending September 30, 2007 on Tuesday, October 30, 2007,
after the market closes. Following the release, the Company will host
a live audio Web cast and conference call at 4:30 p.m. Eastern Time
(1:30 p.m. Pacific Time).

Third Quarter Web Cast/Conference Call

To access the call, please dial 866.277.1184 and enter the pass
code 76456881 at least 10 minutes prior to the start of the call.

    Date: Tuesday, October 30, 2007

    Time: 4:30 p.m. Eastern Time (1:30 p.m. Pacific Time)

    Conference Call Number: 866.277.1184

    International Callers: 617.597.5360

    Pass Code: 76456881

The conference call replay will be available for 48 hours
beginning two hours after the call. The replay number is 888-286-8010
with a pass code of 85202789 international callers should dial
617-801-6888 and enter the same pass code at the prompt.

In addition, the live audio conference call and replay will be
available on the investor relations section of the company’s Web site

About MoSys, Inc.

Founded in 1991, MoSys (Nasdaq: MOSY), develops, licenses and
markets innovative memory and analog/mixed-signal technologies for
semiconductors. MoSys’ patented 1T-SRAM(R) technologies offer a
combination of high density, low power consumption, high speed and low
cost unmatched by other available memory technologies. The single
transistor bit cell used in 1T-SRAM memory results in the technology
achieving much higher density than traditional four or six transistor
SRAMs while using the same standard logic manufacturing processes.
1T-SRAM technologies also offer the familiar, refresh-free interface
and high performance for random address access cycles associated with
traditional SRAMs. In addition, these technologies can reduce
operating power consumption by a factor of four compared with
traditional SRAM technology, making them ideal for embedding large
memories in System on Chip (SoC) designs. MoSys’ licensees have
shipped more than 110 million chips incorporating 1T-SRAM embedded
memory technologies, demonstrating excellent manufacturability in a
wide range of silicon processes and applications. MoSys is
headquartered at 755 N. Mathilda Avenue, Sunnyvale, California 94085.
More information is available on MoSys’ website at

CONTACT: MoSys, Inc.
Jim Pekarsky, CFO, 408-731-1800
Shelton IR
Beverly Twing, Acct. Manager, 972-239-5119 x126

SOURCE: MoSys, Inc.