SUNNYVALE, Calif., Oct 14, 2005 (BUSINESS WIRE) — MoSys, Inc. (Nasdaq:MOSY) today announced it would
release its third quarter 2005 results for the period ending September
30, 2005 on Tuesday, November 1, 2005 after the market closes.
Following the release, the Company will host a live audio Web cast and
conference call at 5:15 p.m. Eastern Time.

Chet Silvestsri, CEO and Mark Voll, Chief Financial Officer will
discuss the company’s earnings and operations on the call. Investors
and other interested parties may listen to the live Web cast by
visiting the investor relations section of the MoSys Web site at A Web cast replay will also be available on the
company’s Web site.

About MoSys, Inc.

Founded in 1991, MoSys (Nasdaq:MOSY), develops, licenses and
markets innovative memory technologies for semiconductors. MoSys’
patented 1T-SRAM technologies offer a combination of high density, low
power consumption, high speed and low cost unmatched by other
available memory technologies. The single transistor bit cell used in
1T-SRAM memory results in the technology achieving much higher density
than traditional six transistor SRAMs while using the same standard
logic manufacturing processes. 1T-SRAM technologies also offer the
familiar, refresh-free interface and high performance for random
address access cycles associated with traditional SRAMs. In addition,
these technologies can reduce operating power consumption by a factor
of four compared with traditional SRAM technology, contributing to
making them ideal for embedding large memories in System on Chip (SoC)
designs. MoSys’ licensees have shipped more than 98 million chips
incorporating 1T-SRAM embedded memory technologies, demonstrating
excellent manufacturability in a wide range of silicon processes and
applications. MoSys is headquartered at 755 N. Mathilda Avenue,
Sunnyvale, California 94085. More information is available on MoSys’
website at

SOURCE: MoSys, Inc.

MoSys, Inc., Sunnyvale
Mark Voll, 408-731-1846
Shelton IR
Beverly Twing, 972-239-5119 x126