SUNNYVALE, Calif., Feb 03, 2006 (BUSINESS WIRE) — Monolithic System Technology, Inc. (MoSys),
(Nasdaq:MOSY), the industry’s leading provider of high-density
system-on-chip (SoC) embedded memory intellectual property (IP), today
announced it would release its fourth quarter and fiscal year 2005
results for the period ending December 30, 2005 on Wednesday, February
15, 2006 after the market closes. Following the release, the Company
will host a live audio Web cast and conference call to at 5:15 p.m.
Eastern Time.

Fourth Quarter Web Cast/Conference Call

To access the call, please dial 866-202-4683 and enter the pass
code 18742101 at least 10 minutes prior to the start of the call.

Date: Wednesday, February 15, 2006
Time: 5:15 p.m. Eastern Time
Conference Call Number: 866-202-4683
International Callers: 617-213-8846
Pass Code: 18742101

The conference call replay will be available for 48 hours
beginning two hours after the call. The replay number is 888-286-8010
with a pass code of 13341841. International callers should dial
617-801-6888 and enter the same pass code at the prompt.

In addition, the live audio conference call and replay will be
available on the investor relations section of the company’s Web site
at https://dev-mosys-web-04-19.pantheonsite.io.

About MoSys, Inc.

Founded in 1991, MoSys (Nasdaq:MOSY), develops, licenses and
markets innovative memory technologies for semiconductors. MoSys’
patented 1T-SRAM technologies offer a combination of high density, low
power consumption, high speed and low cost unmatched by other
available memory technologies. The single transistor bit cell used in
1T-SRAM memory results in the technology achieving much higher density
than traditional six transistor SRAMs while using the same standard
logic manufacturing processes. 1T-SRAM technologies also offer the
familiar, refresh-free interface and high performance for random
address access cycles associated with traditional SRAMs. In addition,
these technologies can reduce operating power consumption by a factor
of four compared with traditional SRAM technology, contributing to
making them ideal for embedding large memories in System on Chip (SoC)
designs. MoSys’ licensees have shipped more than 98 million chips
incorporating 1T-SRAM embedded memory technologies, demonstrating
excellent manufacturability in a wide range of silicon processes and
applications. MoSys is headquartered at 755 N. Mathilda Avenue,
Sunnyvale, California 94085. More information is available on MoSys’
website at https://dev-mosys-web-04-19.pantheonsite.io.

SOURCE: Monolithic System Technology, Inc.

MoSys, Sunnyvale
Chet Silvestri, 408-731-1800
chet@mosys.com
or
Shelton IR
Beverly Twing, 972-239-5119 x126
btwing@sheltongroup.com