SUNNYVALE, Calif.–(BUSINESS WIRE)–Apr. 14, 2009–
MoSys, Inc. (NASDAQ: MOSY), a leading provider of high-density
system-on-chip (SoC) memory intellectual property (IP), today announced
it would release its first quarter 2009 financial results on Tuesday,
April 28, 2009
, after the market closes. Following the release, Len
Perham
, MoSys’ President and Chief Executive Officer, and Jim Sullivan,
Chief Financial Officer, will host a live audio Webcast and conference
call at 4:30 p.m. Eastern Time (1:30 p.m. Pacific Time).

First Quarter 2009 Conference Call / Webcast Information:

To access the call, please dial 1-888-713-4213 and enter
the pass code 93024073 at least 10 minutes prior to the
start of the call.

Date: Tuesday, April 28, 2009

Time: 4:30 p.m. Eastern Time (1:30 p.m. Pacific Time)

Conference Call Number: 1-888-713-4213

International Call Number: 1-617-213-4865

Pass Code: 93024073

The conference call replay will be available for 48 hours, beginning two
hours after the call. The replay number is 1-888-286-8010 with a pass
code of 87854028. International callers should dial 1-617-801-6888 and
enter the same pass code at the prompt.

In addition, the live audio conference call and replay will be available
on the investor relations section of the Company’s Web site at https://dev-mosys-web-04-19.pantheonsite.io.

One may also pre-register their attendance for the conference call,
which will enable immediate entry into the call. To pre-register
please go to:
https://www.theconferencingservice.com/prereg/key.process?key=P8KX3WLNU

About MoSys, Inc.

Founded in 1991, MoSys (NASDAQ: MOSY), develops, markets and licenses
innovative embedded memory intellectual property (IP) technologies for
advanced systems-on-chips (SoCs) used in a variety of home
entertainment, mobile consumer, networking and storage applications.
MoSys’ patented 1T-SRAM and 1T-FLASH technologies offer a combination of
high density, low power consumption, high speed and low cost unmatched
by other available memory technologies. MoSys’ embedded memory IP has
been included in more than 175 million devices demonstrating
silicon-proven manufacturability in a wide range of processes and
applications. MoSys is headquartered at 755 N. Mathilda Avenue,
Sunnyvale, California 94085. More information is available on MoSys’
website at https://dev-mosys-web-04-19.pantheonsite.io.

MoSys and 1T-SRAM are registered trademarks of MoSys, Inc.
1T-FLASH(TM) is a trademark of MoSys, Inc.

Source: MoSys, Inc.

MoSys, Inc.
Jim Sullivan, CFO, 408-731-1800
jsullivan@mosys.com
or
Shelton
IR
Beverly Twing, Sr. Acct. Manager, 972-239-5119 x126
btwing@sheltongroup.com