ASIC Leader Delivers Complex Chip Design Which Incorporates 1T-SRAM®

SUNNYVALE, Calif. and TAIPEI, Taiwan, April 10, 2007 /PRNewswire-FirstCall via COMTEX News Network/ — MoSys, Inc. (Nasdaq: MOSY), the leading provider of high-density system-on-
chip (SoC) embedded memory intellectual property (IP) solutions, and Progate
Group Corporation, Taiwan’s first ASIC design turnkey service provider, today
announced that their latest joint customer will begin production of a new-
generation CMOS chip that will enhance the real-time conference calling
capabilities of mobile phones.

Together, the companies have satisfied the customer’s need to incorporate
a large amount of embedded memory on a competitively priced consumer-oriented
SoC. Progate was selected to lay out and produce the SoC based on customer
specifications. To meet the performance, leakage and area requirements,
Progate chose a high-density 1T-SRAM solution from MoSys.

“Progate was an obvious choice to develop this SoC due to our track record
and our certification under the TSMC Design Center Alliance program,” said
Jack Kao, director of research and development at Progate. “MoSys’ 1-T SRAM
offers the ideal embedded memory solution in the integration of the SoC. Its
compact size and high performance enabled us to reduce the die size while
maintaining a high yield.”

“MoSys and Progate worked very efficiently together to ensure that the
product was delivered to the customer on time and within budget,” said Chet
Silvestri, president and CEO of MoSys. “By working with experienced design
service providers like Progate, we can deliver the advantages of our 1T-SRAM
technology to a large number of customers.”

Progate Group Corporation was founded in 1991. As the first turnkey
service provider of ASIC designs in Taiwan, PGC always exerts its endeavor to
provide the focused and quality services to achieve Time-to-Volume. PGC has
taped-out successfully more than 800 projects and shipped millions of chips
worldwide. In this era of SoC, PGC provides a complete and stable chain of
services, including the wafer fabrication, die package and IP integration. As
part of this chain of services, PGC has the business relationship with TSMC
for more than ten years as a certified member of its Design Center Alliance
Program. More information about PGC is available at

Founded in 1991, MoSys (Nasdaq: MOSY), develops, licenses and markets
industry-leading embedded memory IP for semiconductors. MoSys’ patented 1T-
SRAM® and 1T-FLASH® technologies offer a combination of high density, low
power consumption, high speed and low cost that is unmatched by other memory
technologies. MoSys licensees have shipped more than 100 million chips
incorporating 1T-SRAM, demonstrating excellent manufacturability in a wide
range of silicon processes and applications. MoSys is headquartered at 755 N.
Mathilda Avenue, Sunnyvale, California 94085. More information is available at

NOTE: 1T-SRAM and 1T-FLASH are registered trademarks of MoSys, Inc.

SOURCE: MoSys, Inc.

Jane Ryan, +1-408-489-6391, or