Ultra-dense memory technology available for the latest logic

SUNNYVALE, CA and SAN JOSE, CA, (May 15, 2000)— MoSys,
Inc. and Taiwan Semiconductor Manufacturing Company (TSMC) (NYSE:TSM),
announced today the successful development of test chips fabricated
using MoSys’ advanced 1T-SRAM embedded memory technology on Taiwan
Semiconductor Manufacturing Company’s industry leading 0.15-micron
process. This achievement comes less than two months after TSMC
launched its 0.15-micron process technology. With TSMC’s introduction
of next generation processes now separated by less than a year,
MoSys’ 1T-SRAM memory, with its scalable architecture, facilitates
the rapid deployment of ultra-dense memory on these new manufacturing

“TSMC’s 0.15-micron process, coupled with MoSys’ 1T-SRAM embedded
memory, enables our mutual customers to realize high performance,
ultra-dense memories for their emerging applications ” said
Peyman Kazemkhani, director of TSMC’s IP Alliance program. “TSMC
is committed to providing the advanced processes and technologies
necessary to enable IP companies such as MoSys to create additional
value for these leading edge designs.”

In these deeper sub-micron processes, the rapid silicon-verification
of the critical embedded memory blocks – a critical IP block – is
necessary for designers’ new system-on-chip applications requiring
multi-megabits of memory. MoSys will be available to talk about
this issue, and its 1T-SRAM solution, during TSMC’s Technology Symposium
on Tuesday, May 16 in San Jose, Calif.

“MoSys now has working TSMC 0.15-micron logic process 1T-SRAM
test chips, three months after announcing the 0.18-micron test silicon
and just one month after TSMC’s launch of the 0.15-micron process,
” noted Mark-Eric Jones, vice president and general manager
of intellectual property at MoSys, Inc. “These test chips re-confirm
the scalability of MoSys’ 1T-SRAM memory architecture to the very
latest process geometries.”


Available in densities up to 128Mbits, MoSys’ patented 1T-SRAM
technology uses a single transistor cell to achieve its exceptional
density while maintaining the refresh-free interface and low latency
random memory access cycle time associated with traditional six-transistor
SRAM cells. Embedded 1T-SRAM memories allow designers to get beyond
the density limits of six-transistor SRAMs; it also reduces much
of the circuit complexity and extra cost associated with using embedded
DRAM. In addition to the exceptional performance and density, this
technology offers dramatic power consumption savings by using under
a quarter of the power of traditional SRAM memories. 1T-SRAM technology
is volume production proven in millions of MoSys’ discrete memory


TSMC is the world’s largest dedicated semiconductor foundry, providing
the industry¹s leading process technology, library and IP options
and other leading-edge foundry services. With the mergers of WSMC
and TASMC (effective June 30, 2000), TSMC is constructing or operating
11 fabs and has substantial capacity commitments at three additional
facilities jointly operated by TSMC and its partners. In 2000, TSMC
expects to have the capacity for nearly 3.4 million 8-inch equivalent
wafers. Fabrication processes offered by TSMC include CMOS logic,
mixed-mode, volatile and non-volatile memory, and BiCMOS. TSMC’s
corporate headquarters are in Hsin-Chu, Taiwan. More information
about TSMC is available through the World Wide Web at http://www.tsmc.com.


MoSys, Inc. is the leading semiconductor technology company specializing
in innovative, high performance, random access memories based on
its patented 1T-SRAM architecture. Founded in 1991, the company
develops innovative memory technology for licensing to semiconductor
and systems companies. MoSys also uses this technology to produce
its own memory products. The company¹s unique memory architecture
has been proven in the volume production of over 30 million memory
devices. Licensees that are adopting 1T-SRAM technology include
tier one electronics, semiconductor and foundry companies. The company
is headquartered at 1020 Stewart Drive, Sunnyvale, California, 94086.
More information on MoSys is available at https://dev-mosys-web-04-19.pantheonsite.io.



Note for Editors:

1T-SRAM is a trademark of MoSys, Inc. All other trademarks
or registered trademarks are the property of their respective owners.