Ultra-dense embedded 1T-SRAM available to meet needs of foundry
SUNNYVALE, CA (January 31, 2000)— MoSys, Inc. announced
today that it has successfully ported and silicon-verified its advanced
1T-SRAM embedded memory technology in TSMC’s 0.18-micron standard
logic process and design rules. This milestone was achieved less
than six months after announcing the successful silicon demonstration
of its 1T-SRAM technology in TSMC’s 0.25-micron standard logic process.
MoSys has laid out a very aggressive 1T-SRAM technology roadmap
with development work already advanced on 0.15-micron standard logic
“Embedded memory is the most pervasive silicon intellectual
property (SIP) block on our customers designs and has the largest
economic and performance impact,” commented Roger Fisher, TSMC’s
senior director, strategic marketing. ” We are very encouraged
by this progress in making 1T-SRAM technology available to our customers
on our standard 0.18-micron logic process.”
With MoSys’ 1T-SRAM memories foundry customers can integrate multi-megabit
blocks of high performance, high-density memory into their SoCs.
1T-SRAM macros are immediately available for integration in TSMC’s
0.25- and 0.18-micron standard logic processes.
“TSMC continues to enable the fabless semiconductor market
with its leading-edge foundry products and services” noted
Mark-Eric Jones, vice president and general manager of intellectual
property at MoSys, Inc. “The 1T-SRAM silicon validation data
provides additional assurance for its worldwide semiconductor and
Available in densities up to 128Mbits, MoSys’ patented 1T-SRAM
technology uses a single transistor cell to achieve its exceptional
density while maintaining the refresh-free interface and low latency
random memory access cycle time associated with traditional six-transistor
SRAM cells. Embedded 1T-SRAM allows designers to get beyond the
density limits of six-transistor SRAMs; it also reduces much of
the circuit complexity and extra cost associated with using embedded
DRAM. 1T-SRAM memories can be fabricated in either pure logic or
embedded memory processes using as little as one ninth of the area
of traditional six-transistor SRAM cores. In addition to the exceptional
performance and density, this technology offers dramatic power consumption
savings by using under a quarter of the power of traditional SRAM
memories. 1T-SRAM technology is volume production proven in millions
of MoSys’ discrete memory devices.
MoSys, Inc. is the leading semiconductor technology company specializing
in innovative, high performance, random access memories based on
its patented 1T-SRAM architecture. Founded in 1991, the company
develops innovative memory technology for licensing to semiconductor
and systems companies. MoSys also uses this technology to produce
its own memory products. The company¹s unique memory architecture
has been proven in the volume production of over 30 million memory
devices. Licensees that are adopting 1T-SRAM technology include
tier one electronics, semiconductor and foundry companies. The company
is headquartered at 1020 Stewart Drive, Sunnyvale, California, 94086.
More information on MoSys is available at http://www.mosys.com.
Note for Editors:
1T-SRAM is a trademark of MoSys, Inc. All other trademarks
or registered trademarks are the property of their respective owners.