SUNNYVALE, Calif.–(BUSINESS WIRE)–Jan. 24, 2005–In order to
respond to increasing demand for its products in Taiwan, Monolithic
System Technology, Inc. (MoSys), (Nasdaq:MOSY) the industry’s leading
provider of high-density system-on-chip (SoC) embedded memory
solutions, announced today that it has signed a sales representative
agreement with Terasic Technologies Inc.

Terasic Technologies, Inc focuses on providing ASIC verification
platforms; distributing Electronic Design Automation (EDA) tools and
Intellectual Property (IP); and FPGA prototyping services for the ASIC
and semiconductor industries. Terasic Technologies, Inc provides
advanced solutions for many leading system and ASIC design houses in
Taiwan in the fields of EDA/IP, ASIC Verification, FPGA, and system
design. Backed up by a strong technical team, Terasic Technologies,
Inc adds value to both suppliers and customers by integrating
technical training, design consulting, and EDA services.

“A high-performance, low-power, small-sized embedded SRAM solution
is the key to the success of most complex system-on-chip (SOC) designs
today,” said Sean Peng, CEO of Terasic Technologies, Inc. “Mosys
1T-SRAM(R) technology provides the best embedded memory solution for
SOC/ASIC devices addressing memory-intensive applications such as
imaging compression, networking, and multimedia.”

“To better serve the rapidly growing markets in Taiwan , strong
local technical and sales staff is extremely important,” remarked
Karen Lamar, MoSys’ Vice-President of Sales and Marketing. “Terasic’s
established expertise in Taiwan provides MoSys with an excellent
channel to represent us in one of the most important Asian markets.”

ABOUT MOSYS

Founded in 1991, MoSys (Nasdaq:MOSY), develops, licenses and
markets innovative memory technologies for semiconductors. MoSys’
patented 1T-SRAM technologies offer a combination of high density, low
power consumption, high speed and low cost unmatched by other
available memory technologies. The single transistor bit cell used in
1T-SRAM memory results in the technology achieving much higher density
than traditional four or six transistor SRAMs while using the same
standard logic manufacturing processes. 1T-SRAM technologies also
offer the familiar, refresh-free interface and high performance for
random address access cycles associated with traditional SRAMs. In
addition, these technologies can reduce operating power consumption by
a factor of four compared with traditional SRAM technology,
contributing to making them ideal for embedding large memories in
System on Chip (SoC) designs. MoSys’ licensees have shipped more than
80 million chips incorporating 1T-SRAM embedded memory technologies,
demonstrating excellent manufacturability in a wide range of silicon
processes and applications. MoSys is headquartered at 1020 Stewart
Drive, Sunnyvale, California 94085. More information is available on
MoSys’ website at http://www.mosys.com.

FORWARD LOOKING STATEMENTS

This press release may contain forward-looking statements about
the Company including, without limitation, benefits and performance
expected from use of the Company’s 1T-SRAM technology.

Forward-looking statements are based on certain assumptions and
expectations of future events that are subject to risks and
uncertainties. Actual results and trends may differ materially from
historical results or those projected in any such forward-looking
statements depending on a variety of factors. These factors include
but are not limited to, customer acceptance of our 1T-SRAM
technologies, the timing and nature of customer requests for our
services under existing license agreements, the timing of customer
acceptance of our work under such agreements, the level of commercial
success of licensees’ products such as the Nintendo GAMECUBE and cell
phone hand sets, ease of manufacturing and yields of devices
incorporating our 1T-SRAM, our ability to enhance the 1T-SRAM
technology or develop new technologies, the level of intellectual
property protection provided by our patents, the vigor and growth of
markets served by our licensees and customers and operations of the
Company and other risks identified in the Company’s most recent annual
report on Form 10-K filed with the Securities and Exchange Commission,
as well as other reports that MoSys files from time to time with the
Securities and Exchange Commission. MoSys undertakes no obligation to
update publicly any forward-looking statement for any reason, except
as required by law, even as new information becomes available or other
events occur in the future.

1T-SRAM(R) is a MoSys trademark registered in the U.S. Patent and
Trademark Office. All other trade, product, or service names
referenced in this release may be trademarks or registered trademarks
of their respective holders.

CONTACT: MoSys(R), Sunnyvale
Mark Voll, CFO, 408-731-1846
markv@mosys.com
or
Shelton IR
Beverly Twing, 972-239-5119 x126
btwing@sheltongroup.com

SOURCE: MoSys