SUNNYVALE, Calif.–(BUSINESS WIRE)–April 7, 2003–MoSys, Inc.
(Nasdaq:MOSY), the industry’s leading provider of high density SoC
embedded memory solutions, today announced Shigeru (Gerry) Shimauchi
has joined its worldwide management team. As general manager of the
company’s Japan office, Shimauchi will oversee MoSys’ activities in
Tokyo and provide local contact to partners and customers in the
region.

“We are very pleased to add Gerry to our team. His experience
benefits our Japanese partners and increases MoSys’ visibility within
the marketplace,” said Dr. Fu-Chieh Hsu, president, chairman and chief
executive officer at MoSys. “Having someone with Gerry’s expertise
managing our Tokyo office furthers our reach in the region and
demonstrates that MoSys is determined to offer outstanding service to
all of our partners, customers and vendors in the region.”

“I am honored to join MoSys’ team and to work with some of the
best talent in the industry, while providing the company my knowledge
and understanding of the Japanese marketplace,” said Shimauchi.
“MoSys’ superior memory technology establishes the company as an
industry leader and I am eager to build on that reputation throughout
the region.”

Shimauchi brings more than 20 years of experience in sales and
management to MoSys. Prior to joining the company he held various
management positions with semiconductor companies Nippon Sipex
Corporation and TSMC Japan, the world’s largest foundry. Additionally,
Shimauchi served in senior management roles with Burr-Brown, Japan,
later acquired by Texas Instruments, and Fujitsu Ltd., one of the
largest electronics companies in the world.

ABOUT MOSYS

Founded in 1991, MoSys (Nasdaq:MOSY), develops, licenses and
markets innovative memory technologies for semiconductors. MoSys’
patented 1T-SRAM technologies offer a combination of high density, low
power consumption, high speed and low cost unmatched by other
available memory technologies. The single transistor bit cell used in
1T-SRAM memory results in the technology achieving much higher density
than traditional four or six transistor SRAMs while using the same
standard logic manufacturing processes. 1T-SRAM technologies also
offer the familiar, refresh-free interface and high performance for
random address access cycles associated with traditional SRAMs. In
addition, these technologies can reduce operating power consumption by
a factor of four compared with traditional SRAM technology,
contributing to making them ideal for embedding large memories in
System on Chip (SoC) designs. MoSys’ licensees have shipped more than
50 million chips incorporating 1T-SRAM embedded memory technologies,
demonstrating excellent manufacturability in a wide range of silicon
processes and applications. MoSys is headquartered at 1020 Stewart
Drive, Sunnyvale, Calif. 94085. More information is available on
MoSys’ Web site at https://dev-mosys-web-04-19.pantheonsite.io.

1T-SRAM(R) is a MoSys trademark registered in the U.S. Patent and
Trademark Office. All other trade, product, or service names
referenced in this release may be trademarks or registered trademarks
of their respective holders.

CONTACT: MoSys, Inc., Sunnyvale
K.T. Boyle, 408/731-1830
kboyle@mosys.com
or
Shelton PR
Katie Olivier, 972/239-5119 x128
kolivier@sheltongroup.com

SOURCE: MoSys, Inc.