SUNNYVALE, Calif.–(BUSINESS WIRE)–Jan. 24, 2005–Monolithic
System Technology, Inc. (MoSys), (Nasdaq:MOSY) the industry’s leading
provider of high-density system-on-chip (SoC) embedded memory
solutions, announced today that it has signed Crescendo Technologies
Ltd. of Shanghai, PRC, as an authorized sales representative for MoSys
in China.

Crescendo Technologies Ltd. is a premier electronics design
solutions company, which provides EDA software and Semiconductor
Intellectual Property (SIP) to leading electronics companies in China.
Its customers include many ASIC and system design houses in China.
Crescendo Technologies Ltd. was founded by a group of seasoned sales
professionals from EDA companies such as Cadence, and has excellent
knowledge of the Chinese markets. By providing complete solutions and
good service, Crescendo Technologies Ltd. enables its customers to
reach faster time to market and higher return on their investments.

“I am very glad to team up with MoSys to provide 1T-SRAM(R)-based
solutions to China customers, especially fabless design houses who are
focusing on consumer electronics chip projects,” said David Yang,
Crescendo’s General Manager. “Compared to traditional 6T embedded SRAM
alternatives, 1T-SRAM products help our customers to reduce die size,
while consuming less power. I believe these solutions will raise our
customers’ competitiveness and improve their profit margin.”

“Crescendo Technologies brings a wealth of sales and market
experience in a critical region for MoSys’ long-term growth plans,
China,” remarked Karen Lamar, MoSys’ Vice-President of Sales and
Marketing. “This partnership is another example of MoSys’ firm
commitment to delivering the highest level of sales and technical
support to our customers worldwide.”

About MoSys

Founded in 1991, MoSys (Nasdaq:MOSY), develops, licenses and
markets innovative memory technologies for semiconductors. MoSys’
patented 1T-SRAM technologies offer a combination of high density, low
power consumption, high speed and low cost unmatched by other
available memory technologies. The single transistor bit cell used in
1T-SRAM memory results in the technology achieving much higher density
than traditional four or six transistor SRAMs while using the same
standard logic manufacturing processes. 1T-SRAM technologies also
offer the familiar, refresh-free interface and high performance for
random address access cycles associated with traditional SRAMs. In
addition, these technologies can reduce operating power consumption by
a factor of four compared with traditional SRAM technology,
contributing to making them ideal for embedding large memories in
System on Chip (SoC) designs. MoSys’ licensees have shipped more than
80 million chips incorporating 1T-SRAM embedded memory technologies,
demonstrating excellent manufacturability in a wide range of silicon
processes and applications. MoSys is headquartered at 1020 Stewart
Drive, Sunnyvale, Calif., 94085. More information is available on
MoSys’ website at http://www.mosys.com.

Forward-Looking Statements

This press release may contain forward-looking statements about
the Company including, without limitation, benefits and performance
expected from use of the Company’s 1T-SRAM technology.

Forward-looking statements are based on certain assumptions and
expectations of future events that are subject to risks and
uncertainties. Actual results and trends may differ materially from
historical results or those projected in any such forward-looking
statements depending on a variety of factors. These factors include
but are not limited to, customer acceptance of our 1T-SRAM
technologies, the timing and nature of customer requests for our
services under existing license agreements, the timing of customer
acceptance of our work under such agreements, the level of commercial
success of licensees’ products such as the Nintendo GAMECUBE and cell
phone hand sets, ease of manufacturing and yields of devices
incorporating our 1T-SRAM, our ability to enhance the 1T-SRAM
technology or develop new technologies, the level of intellectual
property protection provided by our patents, the vigor and growth of
markets served by our licensees and customers and operations of the
Company and other risks identified in the Company’s most recent annual
report on Form 10-K filed with the Securities and Exchange Commission,
as well as other reports that MoSys files from time to time with the
Securities and Exchange Commission. MoSys undertakes no obligation to
update publicly any forward-looking statement for any reason, except
as required by law, even as new information becomes available or other
events occur in the future.

1T-SRAM(R) is a MoSys trademark registered in the U.S. Patent and
Trademark Office. All other trade, product, or service names
referenced in this release may be trademarks or registered trademarks
of their respective holders.

CONTACT: MoSys, Sunnyvale
Mark Voll, 408-731-1846
markv@mosys.com
or
Shelton IR
Beverly Twing, 972-239-5119 x126
btwing@sheltongroup.com

SOURCE: Monolithic System Technology, Inc.