SUNNYVALE, Calif., Mar 21, 2005 (BUSINESS WIRE) — Monolithic System Technology, Inc. (MoSys),
(Nasdaq:MOSY) the industry’s leading provider of high-density
system-on-chip (SoC) embedded memory solutions today announced that
First EDA Ltd, of Banbury, UK is MoSys’ newest sales representative,
covering the United Kingdom and Ireland.

First EDA specializes in the distribution and support of
leading-edge EDA solutions for designers involved in the
specification, implementation and verification of custom silicon
devices. For more information on First EDA, please visit the corporate
web pages at http://www.firsteda.com.

“We are excited about the opportunity to represent MoSys, one of
the true pioneers in memory technology,” said Julian Lonsdale, sales
director for First EDA Ltd. “Our UK and Ireland customers are very
active in developing innovative IC solutions with mass market
potential. MoSys’ patented 1T-SRAM technology will give our customers
an optimum route for their embedded memory needs.”

“The United Kingdom and Ireland are very important for MoSys and
we are pleased First EDA has joined our international network of sales
representatives,” said Karen Lamar, MoSys’ vice president of Sales and
Marketing. “The combination of market knowledge and engineering
expertise that has been garnered by First EDA’s staff over many years
will play a key role in establishing MoSys as the preferred high
density embedded memory provider.”

ABOUT MOSYS

Founded in 1991, MoSys (Nasdaq:MOSY), develops, licenses and
markets innovative memory technologies for semiconductors. MoSys’
patented 1T-SRAM technologies offer a combination of high density, low
power consumption, high speed and low cost unmatched by other
available memory technologies. The single transistor bit cell used in
1T-SRAM memory results in the technology achieving much higher density
than traditional four or six transistor SRAMs while using the same
standard logic manufacturing processes. 1T-SRAM technologies also
offer the familiar, refresh-free interface and high performance for
random address access cycles associated with traditional SRAMs. In
addition, these technologies can reduce operating power consumption by
a factor of four compared with traditional SRAM technology,
contributing to making them ideal for embedding large memories in
System on Chip (SoC) designs. MoSys’ licensees have shipped more than
80 million chips incorporating 1T-SRAM embedded memory technologies,
demonstrating excellent manufacturability in a wide range of silicon
processes and applications. MoSys is headquartered at 1020 Stewart
Drive, Sunnyvale, California 94085. More information is available on
MoSys’ website at http://www.mosys.com.

FORWARD LOOKING STATEMENTS

This press release may contain forward-looking statements about
the Company including, without limitation, benefits and performance
expected from use of the Company’s 1T-SRAM technology.

Forward-looking statements are based on certain assumptions and
expectations of future events that are subject to risks and
uncertainties. Actual results and trends may differ materially from
historical results or those projected in any such forward-looking
statements depending on a variety of factors. These factors include
but are not limited to, customer acceptance of our 1T-SRAM
technologies, the timing and nature of customer requests for our
services under existing license agreements, the timing of customer
acceptance of our work under such agreements, the level of commercial
success of licensees’ products such as the Nintendo GAMECUBE and cell
phone hand sets, ease of manufacturing and yields of devices
incorporating our 1T-SRAM, our ability to enhance the 1T-SRAM
technology or develop new technologies, the level of intellectual
property protection provided by our patents, the vigor and growth of
markets served by our licensees and customers and operations of the
Company and other risks identified in the Company’s most recent annual
report on Form 10-K filed with the Securities and Exchange Commission,
as well as other reports that MoSys files from time to time with the
Securities and Exchange Commission. MoSys undertakes no obligation to
update publicly any forward-looking statement for any reason, except
as required by law, even as new information becomes available or other
events occur in the future.

1T-SRAM(R) is a MoSys trademark registered in the U.S. Patent and
Trademark Office. All other trade, product, or service names
referenced in this release may be trademarks or registered trademarks
of their respective holders.

SOURCE: MoSys

MoSys(R), Sunnyvale
Walter Croce, 408-731-1820

wcroce@mosys.com
or
Shelton PR

Katie Olivier, 972-239-5119 x128

kolivier@sheltongroup.com