36-Mbit Synchronous SRAM Leads Industry in High-density and Low-power
SUNNYVALE, CALIFORNIA (October 8, 2001) – Today, MoSys, Inc. (NASDAQ: MOSY) announced the availability and shipping of its high-density, low-power 36-Mbit memory.
First to market with this level of bit density, the MoSys SRAM is targeted at high-end data, telecommunications and digital signal processing (DSP) applications.
The new 36-Mbit MC8051M36 symmetric pipelined burst SRAM is designed for 1.8V memory core power and either 1.8V or 2.5V I/O power.
The MC8051M36 symmetric pipelined burst devices operate at speeds up to 200 MHz, with sub 3ns clock to data access time.
MoSys’ industry-leading 36-Mbit SRAM offers the highest available bit density and lowest power consumption.
“By using MoSys’ unique technology, this product offers designers the best possible utilization of system space and power,” said Andre Hassan, MoSys’ vice president and general manager of memory products.
“MoSys will continue to build on its technology leadership by developing and offering even higher density SRAM products.”
The MC8051M36 SRAM’s symmetric read and write pipeline timing is optimized for 100% bus utilization.
Eliminating the bus turnaround cycles required by SRAMs with different read and write pipeline delays is essential for today’s high-end equipment.
MoSys’ SRAM Products
MoSys is the leader in high-density SRAM technology, providing customers with innovative application specific memories.
MoSys’ SRAMs are available in 4-, 8-, 9- and new 36-Mbit densities. Future product plans include higher densities, as well as different interface logic and I/O configurations.
Founded in 1991, MoSys develops, licenses and markets innovative memory technology for semiconductors. MoSys’ patented 1T-SRAM® technology offers a combination of high density, low power consumption and high speed unmatched by other available memory technologies.
The single transistor bit cell used in 1T-SRAM technology results in the technology achieving much higher density than traditional four or six transistor SRAMs while using the same standard manufacturing processes.
1T-SRAM technology also offers the familiar, refresh-free interface and high performance for random address access cycles associated with traditional SRAMs.
In addition, this technology can reduce operating power consumption by a factor of four compared with traditional SRAM technology, contributing to making it an ideal technology for large memories.
1T-SRAM technology is in volume production both in MoSys’ standalone memories as well as in SoC products at MoSys’ licensees.
MoSys is headquartered at 1020 Stewart Drive, Sunnyvale, California 94085. More information is available on MoSys’ website http://www.mosys.com.
Note for Editors:
1T-SRAM is a trademark of MoSys,
Inc. All other trademarks or registered trademarks are the property
of their respective owners.