SUNNYVALE, CALIFORNIA – (August 08, 2002) – MoSys, Inc. (NASDAQ: MOSY), the industry’s leading provider of high density SoC embedded memory solutions for the communications and consumer electronics markets, ranked first overall in net margins when compared to 87 other semiconductor companies, according to Semiconductor Times (August issue).

The Semiconductor Times rankings are based on reported earnings for 2Q 2002, 1Q 2002 and 2Q 2001. Cliff Hirsch, publisher of Semiconductor Times, stated, “I strive to provide reliable, inside, advance information on emerging semiconductor companies and technologies. We carefully track net margin and gross margin as leading indicators for up and coming semiconductor companies. Net margin of 42 percent and gross margin of 89 percent, coupled with 21 percent sales growth is truly impressive in these trying times.”

“These results reflect the compelling value our customers see in MoSys’ technology,” stated Dr. Fu-Chieh Hsu, CEO of MoSys. ” Despite the semiconductor and economic slowdowns, MoSys continues to be successful in building stronger relationships with our clients and partners and in managing new business initiatives. Our outstanding ranking reflects the results from these efforts. We are pleased with the recognition that we have received from Semiconductor Times.”

MoSys’ licensees cover a wide range of applications in the communications and consumer electronics markets. The company’s patented, volume production proven, semiconductor memory technology, 1T-SRAM, provides significant advantages over traditional SRAM in density, power consumption and cost that enable designers to more economically use a larger amount of memory. This combination of high density, low power consumption, high speed and low cost is unmatched by other available memory technologies. MoSys’ memory technologies are available in 1T-SRAM-RTM (reliability) and 1T-SRAM-MTM (mobile).

About MoSys

Founded in 1991, MoSys develops, licenses and markets innovative memory technology for semiconductors. The single transistor bit cell used in 1T-SRAM technology results in the technology achieving much higher density than traditional four or six transistor SRAMs while using the same standard logic manufacturing processes. 1T-SRAM technology also offers the familiar, refresh-free interface and high performance for random address access cycles associated with traditional SRAMs. In addition, this technology can reduce operating power consumption by a factor of four compared with traditional SRAM technology, contributing to making it an ideal technology for embedding large memories in System on Chip (SoC) designs.

1T-SRAM technology is in volume production both in SoC products at MoSys’ licensees as well as in MoSys’ standalone memories. MoSys is headquartered at 1020 Stewart Drive, Sunnyvale, California 94085. More information is available on MoSys’ website at

Note for Editors:

1T-SRAM® is a MoSys trademark registered in the U.S. Patent and Trademark Office. All other trademarks or registered trademarks are the property of their respective owners.