SUNNYVALE, Calif., Jul 7, 2003 (BUSINESS WIRE) — MoSys, Inc.
(Nasdaq:MOSY) has been named as the fastest growing Top 10
semiconductor Intellectual Property (IP) vendor by IP revenue,
according to a report by leading independent market research company,
Gartner Dataquest. The survey, conducted by Jim Tully, a chief analyst
at Gartner Dataquest, notes that MoSys’ revenues from semiconductor IP
leapt from $9.5 million in 2001 to $24.9M in 2002, representing a
growth of 162%, more than five times the industry average. The 2002
position builds on an equally strong showing in a similar survey last
year, when MoSys was ranked fastest growing Top 20 semiconductor IP
company.

MoSys also ranked highly in growth of royalties derived from
semiconductor IP, rising from $3.4 million in 2001 to $14.4M in 2002,
placing it in the top four IP vendors worldwide by royalty revenue.
These royalties represented 58 percent of MoSys’ revenues from IP,
more than double than the industry average of 21 percent.

The 2002 Gartner Dataquest report shows that memory is the fastest
growing revenue generator by function, and MoSys is the only
specialist memory IP supplier to be noted by Tully as among the
“leaders that made a strong contribution in 2002.”

“We’re very satisfied with our worldwide number one ranking in IP
revenue growth,” said Mark-Eric Jones, vice president and general
manager of intellectual property for MoSys, “and we’re particularly
pleased that we have achieved such impressive growth figures for the
second year running. In particular, it is very encouraging that we
have maintained our momentum in royalty growth. This shows the
increasing adoption of our technology for volume production by our
customers – our most recent success is in production in a
latest-generation cell phone in Asia – and the continuing value that
our customers receive. It’s good to see that Gartner Dataquest concurs
on the importance of royalties: the recommendation Jim Tully makes on
page one of the report comments: ‘Vendors must develop business models
that will build royalty revenue for the benefit of vendors and users.’
At MoSys, we have been following such a model since starting our IP
business.”

ABOUT MOSYS AND 1T-SRAM

Founded in 1991, MoSys (Nasdaq:MOSY), develops, licenses and
markets innovative memory technologies for semiconductors. MoSys’
patented 1T-SRAM technologies offer a combination of high density, low
power consumption, high speed and low cost unmatched by other
available memory technologies. The single transistor bit cell used in
1T-SRAM memory results in the technology achieving much higher density
than traditional four or six transistor SRAMs, while using the same
standard logic manufacturing processes.

1T-SRAM technologies also offer the familiar, refresh-free
interface and high performance for random address access cycles
associated with traditional SRAMs. In addition, these technologies can
reduce operating power consumption by a factor of four compared with
traditional SRAM technology, contributing to making it ideal for
embedding large memories in System on Chip (SoC) designs. MoSys’
licensees have shipped more than 50 million chips incorporating
1T-SRAM embedded memory, demonstrating the excellent manufacturability
of the technology in a wide range of silicon processes and
applications. MoSys is headquartered at 1020 Stewart Drive, Sunnyvale,
California 94085. More information is available on MoSys’ Web site at
https://dev-mosys-web-04-19.pantheonsite.io.

1T-SRAM(R) is a MoSys trademark registered in the U.S. Patent and
Trademark Office. All other trade, product, or service names
referenced in this release may be trademarks or registered trademarks
of their respective holders.

“Safe Harbor” Statement under the Private Securities Litigation
Reform Act of 1995: Statements in this press release regarding MoSys,
Inc.’s business which are not historical facts are “forward-looking
statements” that involve risks and uncertainties. For a discussion of
such risks and uncertainties, which could cause actual results to
differ from those contained in the forward-looking statements, see
“Risk Factors” in the Company’s Annual Report or Form 10-K for the
most recently ended fiscal year.