SUNNYVALE, Calif., Oct. 28 /PRNewswire-FirstCall/ — MoSys, Inc.
(Nasdaq: MOSY), a leading provider of high-density system-on-chip (SoC) memory
and analog/mixed-signal intellectual property (IP), today announced it has
achieved Level III and IV verification of its 1T-SRAM embedded memory
technology on TSMC’s 90 nanometer (nm) General Purpose eDRAM process by the
foundry’s IP Alliance program.
TSMC’s IP Alliance includes a quality management program that requires IP
cores to demonstrate manufacturability and functionality. MoSys’ 1T-SRAM
memory macros have been tested and verified to Levels III and IV, including
full characterization of seven-corner split wafer lots and full high
temperature operating life (HTOL) testing on three distinct wafer lots.
“We are pleased to reach this important milestone in which MoSys’
patented technologies were successfully incorporated into SoC designs
fabricated using TSMC’s 90 nm advanced processes,” said Len Perham, President
and Chief Executive Officer of MoSys. “By leveraging the extensive testing
and stressing performed to reach TSMC Level III and IV compliance, MoSys can
now more clearly demonstrate the reliability of MoSys’ 1T-SRAM memories.”
About MoSys, Inc.
Founded in 1991, MoSys (NASDAQ: MOSY), develops, markets and licenses
innovative embedded memory and analog/mixed-signal intellectual property (IP)
technologies for advanced SoCs used in a variety of home entertainment, mobile
consumer, networking and storage applications. MoSys’ patented 1T-SRAM and
1T-FLASH technologies offer a combination of high density, low power
consumption, high speed and low cost unmatched by other available memory
technologies. MoSys’ advanced analog/mixed-signal technologies include a
highly integrated Blu-ray DVD front-end and Gigabit Ethernet. MoSys’ embedded
memory IP has been included in more than 160 million devices demonstrating
silicon-proven manufacturability in a wide range of processes and
applications. MoSys is headquartered at 755 N. Mathilda Avenue, Sunnyvale,
California 94085. More information is available on MoSys’ website at
MoSys and 1T-SRAM are registered trademarks of MoSys, Inc. 1T-FLASH(TM) is
a trademark of MoSys, Inc
Director of Marketing, Memory Products
+1 (408) 731-1820
Sr. Acct. Manager
972-239-5119 ext. 126
SOURCE MoSys, Inc.