SANTA CLARA, Calif.–(BUSINESS WIRE)–Nov. 16, 2011– MoSys, Inc.:




















































Who:

 

MoSys (NASDAQ: MOSY), a leading provider of serial chip-to-chip communications solutions that deliver unparalleled bandwidth performance for next generation networking systems and advanced system-on-chip (SoC) designs, is presenting at LSI’s Accelerating Innovation Summit 2011.

 

Michael Miller, VP of Technology Innovation & System Applications, is a panelist on Track 3, Session 3, “Core Technologies to Accelerate Innovation in Networking & Storage.” The panel will debate the pros and cons of memory solutions for specific networking applications. This session occurs 2 – 3:30 p.m. on both days of the conference.

 

What:


LSI’s Accelerating Innovation Summit 2011 is a two-day, invitation-only conference where LSI representatives and industry experts will share their technology insights. Demonstrations of LSI’s unique storage and networking silicon innovations will be shown.

 

When:


LSI’s Accelerating Innovation Summit 2011 takes place November 16-17, 2011.

 

Where:


Crowne Plaza San Jose – Silicon Valley
777 Bellew Drive
Milpitas, CA 95035

 

More information about MoSys’ participation at LSI’s Accelerating Innovation Summit 2011 and other upcoming conferences is available on its website at https://dev-mosys-web-04-19.pantheonsite.io/eventCalendar.php.

 

About MoSys, Inc.


MoSys, Inc. (NASDAQ: MOSY) is a leading provider of high-performance networking memory solutions and high-speed, multi-protocol serial interface intellectual property (SerDes IP). MoSys’ leading edge Bandwidth Engine® ICs combine the company’s patented 1T-SRAM® high-density memory with its SerDes IP and are initially targeted at providing breakthroughs in bandwidth and access performance in next generation networking systems. MoSys’ SerDes IP and DDR3 PHYs support a wide range of data rates across a variety of standards, while its 1T-SRAM memory cores provide a combination of high-density, low-power consumption, high-speed and low cost advantages for high-performance applications. MoSys is headquartered in Santa Clara, California. More information is available on MoSys’ website at https://dev-mosys-web-04-19.pantheonsite.io.


MoSys, 1T-SRAM and Bandwidth Engine are registered trademarks of MoSys, Inc. in the US and/or other countries. The MoSys logo is a trademark of MoSys, Inc. All other marks mentioned herein are the property of their respective owners.


Source: MoSys, Inc.


MoSys, Inc.
Kristine Perham, +1-408-418-7670
kperham@mosys.com
or
Shelton Group
Katie Olivier, +1-972-239-5119 ext. 128
kolivier@sheltongroup.com