SUNNYVALE, Calif., Feb 3, 2003 (BUSINESS WIRE) — MoSys, Inc. (Nasdaq:MOSY),
the industry’s leading provider of high-density embedded memory technology,
today announced the opening of its first Japan office. Located in Tokyo, MoSys’
new office will expand the company’s global presence and add a point of contact
for current customers and partners located in the region.

“To have a true global presence, companies must be able to provide local access
and immediate availability to customers throughout the world,” said Dr. Fu-Chieh
Hsu, president, chairman and chief executive officer at MoSys. “We have already
seen tremendous growth in our licensing business from Japan and want to further
this and improve the support for our existing customers.”

MoSys’ Japanese office is located at Quoure Ebisu 302, 4-11-9 Ebisu, Shibuya-ku
Tokyo, 150-0013, Japan. The phone number is +81-3-3441-2028, fax
+81-3-3441-2029.

ABOUT MOSYS

Founded in 1991, MoSys (Nasdaq:MOSY), develops, licenses and markets innovative
memory technologies for semiconductors. MoSys’ patented 1T-SRAM technologies
offer a combination of high density, low power consumption, high speed and low
cost unmatched by other available memory technologies. The single transistor bit
cell used in 1T-SRAM memory results in the technology achieving much higher
density than traditional four or six transistor SRAMs while using the same
standard logic manufacturing processes. 1T-SRAM technologies also offer the
familiar, refresh-free interface and high performance for random address access
cycles associated with traditional SRAMs. In addition, this technology can
reduce operating power consumption by a factor of four compared with traditional
SRAM technology, contributing to making it an ideal technology for embedding
large memories in System on Chip (SoC) designs. MoSys’ licensees have shipped
more than 50 million chips incorporating 1T-SRAM embedded memory technology,
demonstrating the excellent manufacturability of the technology in a wide range
of silicon processes and applications. MoSys is headquartered at 1020 Stewart
Drive, Sunnyvale, California 94085. More information is available on MoSys’
website at https://dev-mosys-web-04-19.pantheonsite.io.

Note for Editors:1T-SRAM(R)is a MoSys trademark registered in the U.S. Patent
and Trademark Office. All other trademarks or registered trademarks are the
property of their respective owners.