SUNNYVALE, Calif.–(BUSINESS WIRE)–Feb. 14, 2005–Monolithic
System Technology, Inc. (MoSys), (Nasdaq:MOSY) the industry’s leading
provider of high-density system-on-chip (SoC) embedded memory
solutions, and FM COM Corporation, one of the most influential
manufacturer’s representatives in Korea, today announced an agreement
for FM COM to represent MoSys in Korea.

FM COM Corporation, located in Seoul, Korea, specializes in
representing leading companies in the computer and consumer
industries. The company was founded in 1993 by Jung-Ki Hong, who
previously served as Korea country manager for companies such as Texas
Instruments and Chips and Technologies. FM COM’s strong reputation in
the Korean markets is based on providing quality technical support to
customers ranging from the “Korean big 5” to emerging and medium sized
computers & communication product manufacturers. For more information,
please see: http://www.fm.co.kr.

“We are excited about the opportunity for firmly positioning MoSys
as the leading memory design technology provider in Korea, especially
in the newly growing area of System on Chip (SoC) designs,” said
Jung-Ki Hong, President & CEO of FM COM Corporation. “By providing
access to MoSys to a full range of customers in Korea who need high
density embedded memory products in their SOC designs, we will proudly
share MoSys’ success in Korea.”

“FM COM Corporation complements MoSys’ direct sales and marketing
team by bringing extensive regional marketing intelligence and system
level knowledge to Korea,” expressed Karen Lamar, MoSys’
Vice-President of Sales and Marketing. “By establishing a local sales
presence in Korea, MoSys takes another important step towards our goal
of delivering the highest level of sales and technical support to our
customers worldwide.”

ABOUT MOSYS

Founded in 1991, MoSys (Nasdaq:MOSY), develops, licenses and
markets innovative memory technologies for semiconductors. MoSys’
patented 1T-SRAM technologies offer a combination of high density, low
power consumption, high speed and low cost unmatched by other
available memory technologies. The single transistor bit cell used in
1T-SRAM memory results in the technology achieving much higher density
than traditional four or six transistor SRAMs while using the same
standard logic manufacturing processes. 1T-SRAM technologies also
offer the familiar, refresh-free interface and high performance for
random address access cycles associated with traditional SRAMs. In
addition, these technologies can reduce operating power consumption by
a factor of four compared with traditional SRAM technology,
contributing to making them ideal for embedding large memories in
System on Chip (SoC) designs. MoSys’ licensees have shipped more than
80 million chips incorporating 1T-SRAM embedded memory technologies,
demonstrating excellent manufacturability in a wide range of silicon
processes and applications. MoSys is headquartered at 1020 Stewart
Drive, Sunnyvale, California 94085. More information is available on
MoSys’ website at http://www.mosys.com.

FORWARD LOOKING STATEMENTS

This press release may contain forward-looking statements about
the Company including, without limitation, benefits and performance
expected from use of the Company’s 1T-SRAM technology.

Forward-looking statements are based on certain assumptions and
expectations of future events that are subject to risks and
uncertainties. Actual results and trends may differ materially from
historical results or those projected in any such forward-looking
statements depending on a variety of factors. These factors include
but are not limited to, customer acceptance of our 1T-SRAM
technologies, the timing and nature of customer requests for our
services under existing license agreements, the timing of customer
acceptance of our work under such agreements, the level of commercial
success of licensees’ products such as the Nintendo GAMECUBE and cell
phone hand sets, ease of manufacturing and yields of devices
incorporating our 1T-SRAM, our ability to enhance the 1T-SRAM
technology or develop new technologies, the level of intellectual
property protection provided by our patents, the vigor and growth of
markets served by our licensees and customers and operations of the
Company and other risks identified in the Company’s most recent annual
report on Form 10-K filed with the Securities and Exchange Commission,
as well as other reports that MoSys files from time to time with the
Securities and Exchange Commission. MoSys undertakes no obligation to
update publicly any forward-looking statement for any reason, except
as required by law, even as new information becomes available or other
events occur in the future.

1T-SRAM(R) is a MoSys trademark registered in the U.S. Patent and
Trademark Office. All other trade, product, or service names
referenced in this release may be trademarks or registered trademarks
of their respective holders.

CONTACT: MoSys(R), Sunnyvale
Mark Voll, CFO, 408-731-1846
markv@mosys.com
or
Shelton IR
Beverly Twing, 972-239-5119 x126
btwing@sheltongroup.com

SOURCE: MoSys