Global technology leader licenses MoSys’ memory technology for
networking, computing and imaging products

SUNNYVALE, Calif.–(BUSINESS WIRE)–Jan. 12, 2004– MoSys, Inc. (NASDAQ: MOSY), the industry’s leading provider of
high density SoC embedded memory solutions today announced that
Agilent Technologies Inc., a leading provider of application specific
integrated circuits (ASICs), has licensed MoSys’ 1T-SRAM(R) embedded
memory technology. The long-term agreement enables Agilent to
integrate MoSys’ embedded memory into its current and next-generation
ASIC and SoC products.

“MoSys’ 1T-SRAM technology provides us with a solution for
embedding large, high-performance, high-density memories into a wide
range of ASIC and SoC applications,” said James Stewart, vice
president and general manager of Agilent’s ASIC Products Division.
“Our selection of this innovative memory technology reflects an
ongoing commitment to meeting the performance requirements of our

MoSys’ 1T-SRAM technologies have already been silicon-proven in
six process generations – including 90 nanometers – and are in
high-volume production in many consumer and communications products.

“As the semiconductor industry continues to require much greater
quantities of high-performance memory in SoC designs, 1T-SRAM memories
enable customers to reach new levels of performance, quality and
low-costs that cannot be achieved using other embedded memory
technologies,” noted Mark-Eric Jones, vice president and general
manager of Intellectual Property at MoSys. “We are pleased to add
Agilent Technologies to our growing list of leading semiconductor


Founded in 1991, MoSys (NASDAQ: MOSY), develops, licenses and
markets innovative memory technologies for semiconductors. MoSys’
patented 1T-SRAM technologies offer a combination of high density, low
power consumption, high speed and low cost unmatched by other
available memory technologies. The single transistor bit cell used in
1T-SRAM memory results in the technology achieving much higher density
than traditional four or six transistor SRAMs, while using the same
standard logic manufacturing processes. 1T-SRAM technologies also
offer the familiar, refresh-free interface and high performance for
random address access cycles associated with traditional SRAMs. In
addition, these technologies can reduce operating power consumption by
a factor of four compared with traditional SRAM technology,
contributing to making it ideal for embedding large memories in System
on Chip (SoC) designs. MoSys’ licensees have shipped more than 50
million chips incorporating 1T-SRAM embedded memory, demonstrating the
excellent manufacturability of the technology in a wide range of
silicon processes and applications. MoSys is headquartered at 1020
Stewart Drive, Sunnyvale, California 94085. More information is
available on MoSys’ website at

Note for Editors:

1T-SRAM(R) is a MoSys trademark registered in the U.S. Patent and
Trademark Office. All other trade, product, or service names
referenced in this release may be trademarks or registered trademarks
of their respective holders.

CONTACT: MoSys, Sunnyvale
K.T. Boyle, 408-731-1830
Shelton PR
Katie Olivier, 972-239-5119 x128