NEC first vendor to offer ASIC customers ultra-dense
SRAM technology
Patented 1T-SRAM technology offers SRAM performance at DRAM density

SUNNYVALE, CA and TOKYO, JAPAN, March 1, 1999—
MoSys, Inc. and NEC Corporation today announced that NEC has
licensed MoSys’ advanced embedded 1T-SRAM memory technology. NEC
will offer 1T-SRAM to its ASIC customers that require high performance,
high-density embedded memory blocks.

“NEC evaluated and then licensed MoSys’ embedded 1T-SRAM memory
technology for use with our ASIC customers based on its unique combination
of performance, density and power capabilities not available from
other SRAM technologies,” said Tom Nukiyama, senior manager
at NEC’s ASIC division. “Our customers now have an exciting
new option for ASIC and SoC designs requiring large quantities of
embedded SRAM memory.”

“Making this unique technology available through NEC, one
of the world’s top ASIC companies, will allow the benefits of MoSys’
ultra-dense 1T-SRAM architecture to be realized by leading system-on-chip
developers,” said Mark-Eric Jones, vice president and general
manager, intellectual property at MoSys, Inc.

About 1T-SRAM

Available in densities up to 128Mbits, 1T-SRAM technology uses
a single-transistor cell to achieve its exceptional density while
maintaining the refresh-free interface and low latency random memory
access cycle time associated with normal six-transistor SRAM cells.
1T-SRAM memories can be fabricated using either pure logic or embedded
memory processes without violating standard design rules, and using
as little as one ninth of the area of normal six-transistor SRAM
cores. In addition, this technology offers dramatic power consumption
savings using a quarter of the power of conventional SRAM designs.

About NEC Corporation

NEC Corporation (NASDAQ: NIPNY) pioneered the concept of C&C,
the integration of Computers and Communications, and is the only
company in the world to be counted among top ranking corporations
spanning the wide range of fields essential for this vision of multimedia:
computers, communications and electronic devices. Employing in excess
of 150,000 people around the world, NEC saw net sales in fiscal
year 1997-98 amount to 4,901 billion yen (approximately US$40 billion).
For further information, visit the NEC home page at:

About MoSys

MoSys, Inc. is a semiconductor memory technology company that specializes
in innovative, high performance, random access memories including
products based on its patented 1T-SRAM technology. Founded in 1991,
the Company develops and markets memory integrated circuits as well
as licenses memory technology and cores to semiconductor and systems
companies. The Company is headquartered at 1020 Stewart Drive, Sunnyvale,
California 94086. More information on MoSys is available at


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Note for Editors:

1T-SRAM is a trademark of MoSys, Inc. All other trademarks or registered
trademarks are the property of their respective owners.