Gives Analog Devices access to ultra-dense embedded
Patented 1T-SRAM technology offers SRAM performance at DRAM density
SUNNYVALE, CA March 1, 1999— MoSys, Inc.
announced today that Analog Devices (NYSE: ADI) has licensed MoSys’
1T-SRAM memory technology. This unique technology is designed to
enable future products that require very high-performance, high-density
embedded memory blocks. These requirements are typical of many of
the fastest-growing product areas served by the semiconductor industry,
including cellular phones, pagers, digital cameras, modems, and
“We evaluated MoSys’ embedded 1T-SRAM memory technology and
found it offered a superior combination of performance, density
and power capabilities not available from other technologies,”
said Samuel H. Fuller, Analog Devices, Inc., vice president for
research and development.
“With the proliferation of high-volume consumer electronics
applications, new DSP architectures featuring ultra-dense, high-speed
on-chip memory are a must,” said Will Strauss, principal analyst
at Forward Concepts. “MoSys’ 1T-SRAM represents a needed technology
breakthrough for these next-generation DSP engines.”
The 1T-SRAM technology has already been proven in silicon through
the volume shipment of MoSys’ discrete SRAM memory devices. These
devices are used in cache memory and other applications that demand
high performance, high density and very low power consumption.
“We are pleased that Analog Devices has licensed MoSys’ 1T-SRAM,
given its reputation for leading the industry with innovative architectures
and products,” commented Mark-Eric Jones, vice president and
general manager, intellectual property at MoSys, Inc. “The
ultra-dense 1T-SRAM is an ideal fit for the future memory-intensive
signal processing solutions demanded by the market.”
Available in densities up to 128 Mbits, 1T-SRAM technology uses
a single-transistor cell to achieve its exceptional density while
maintaining the refresh-free interface and low latency random memory
access cycle time associated with normal six-transistor SRAM cells.
1T-SRAM memories can be fabricated using either pure logic or embedded
memory processes without violating standard design rules, and using
as little as one ninth of the area of normal six-transistor SRAM
cores. In addition, this technology offers dramatic power consumption
savings using a quarter of the power of conventional SRAM designs.
About Analog Devices
With fiscal 1998 sales of $1.23 billion, Analog Devices (NYSE:
ADI) is a leading manufacturer of precision high-performance integrated
circuits used in analog and digital signal processing applications.
Headquartered in Norwood, Massachusetts, the company employs approximately
7,100 people worldwide and has manufacturing facilities in Massachusetts,
California, North Carolina, Ireland, the Philippines and Taiwan.
MoSys, Inc. is a semiconductor memory technology company that specializes
in innovative, high performance, random access memories including
products based on its patented 1T-SRAM technology. Founded in 1991,
the Company develops and markets memory integrated circuits as well
as licenses memory technology and cores to semiconductor and systems
companies. The Company is headquartered at 1020 Stewart Drive, Sunnyvale,
California 94086. More information on MoSys is available at http://www.mosys.com.
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Note for Editors:
1T-SRAM is a trademark of MoSys, Inc. All other trademarks or registered
trademarks are the property of their respective owners.