Delivers low power, superior reliability and ultimate
density for high-performance ASIC applications using
0.13-micron standard logic process

SUNNYVALE, Calif.–(BUSINESS WIRE)–July 6, 2004– MoSys, Inc. (Nasdaq:MOSY) the leading provider of high-density SoC
embedded memory solutions and Open-Silicon, Inc., a fabless ASIC
company that provides a predictable, reliable and cost effective
alternative to traditional chip design and supply chain models, today
announced the licensing of 1T-SRAM(R)-R(TM) embedded memory technology
to Open-Silicon. MoSys’ patented technology will enable Open-Silicon
to provide its customers with high quality ASICs containing embedded
memory, which will be fabricated in a standard logic process. The
1T-SRAM-R technology has been proven to dramatically reduce soft error
rates (SERs) to fewer than 10 FIT/Mb in 0.13-micron process technology
resulting in improved system-level reliability at a low cost while
still maintaining the simple, industry-standard SRAM interface.

“MoSys’ 1T-SRAM-R memory, including it’s patented Transparent
Error Correction(TM) (TEC(TM)) technology, provides a valuable
solution for embedding large high-performance, low-power memories
cost-effectively into SoC designs,” said Rajesh Shah, Director of
Engineering and IP at Open-Silicon. “1T-SRAM-R memory technology in
collaboration with our OpenMODEL(TM) concept addresses our customer’s
growing need to make intelligent and informed choices that lower cost
and reduce risk at each step of the ASIC implementation.”

Open-Silicon joins a long and growing list of world-class
MoSys-licensed companies who are using 1T-SRAM-R in a wide range of
applications that require cost savings combined with the highest
levels of quality, reliability and low power.

“We are very pleased to add Open-Silicon to our list of leading
companies that have licensed our 1T-SRAM memory technology,” said
Mark-Eric Jones, vice president and general manager of intellectual
property at MoSys. “As the proportion of integrated circuit die area
occupied by embedded memory continues to grow, selection of the
correct memory technology becomes one of the key decisions for IC
designers. By choosing our 1T-SRAM-R embedded memory, Open-Silicon and
their customers will take advantage of the industry’s highest quality,
lowest cost, embedded memory solution.”

ABOUT OPEN-SILICON

Open-Silicon, Inc. is a fabless ASIC company delivering the most
cost-effective, predictable and reliable custom ASIC solution to
electronics product customers worldwide. Open-Silicon’s OpenMODEL(TM)
is the semiconductor industry’s first end-to-end custom ASIC solution
based on a revolutionary business model that provides a seamless,
low-cost, low risk alternative to traditional models for complex ASIC
design and development. For more information, visit Open-Silicon’s
website at www.open-silicon.com or call 408-523-1200.

ABOUT MOSYS

Founded in 1991, MoSys (Nasdaq:MOSY), develops, licenses and
markets innovative memory technologies for semiconductors. MoSys’
patented 1T-SRAM technologies offer a combination of high density, low
power consumption, high speed and low cost unmatched by other
available memory technologies. The single transistor bit cell used in
1T-SRAM technology results in the technology achieving much higher
density than traditional four or six transistor SRAMs while using the
same standard logic manufacturing processes. 1T-SRAM technologies also
offer the familiar, refresh-free interface and high performance for
random address access cycles associated with traditional SRAMs. In
addition, this technology can reduce operating power consumption by a
factor of four compared with traditional SRAM technology, contributing
to making it an ideal technology for embedding large memories in
System on Chip (SoC) designs. 1T-SRAM technology is in volume
production both in SoC products at MoSys’ licensees as well as in
MoSys’ standalone memories. MoSys is headquartered at 1020 Stewart
Drive, Sunnyvale, California 94085. More information is available on
MoSys’ website at http://www.mosys.com.

Note for Editors:

1T-SRAM(R) is a MoSys trademark registered in the U.S. Patent and
Trademark Office. All other trade, product, or service names
referenced in this release may be trademarks or registered trademarks
of their respective holders.

CONTACT: MoSys, Sunnyvale
Public Relations
K.T. Boyle, 408-731-1830
kboyle@mosys.com
or
Open Silicon Inc., Sunnyvale
Marcom
Darwa Peterson, 408-328-8366
Darwa.peterson@open-silicon.com

SOURCE: MoSys, Inc.