Partnership Delivers Superior Reliability and Ultimate Densities
for High-Performance Industrial Applications Using 0.13-Micron
Standard Logic Process

SUNNYVALE, Calif. & TOKYO–(BUSINESS WIRE)–Nov. 25, 2002–MoSys, Inc. (Nasdaq:MOSY), the leading provider of high-density
SoC embedded memory solutions and Hitachi Information Technology Co.,
Ltd. (Hitachi-IT), a Japanese Corporation that focuses on ASIC
Integrated Design Services, today announced the licensing of
1T-SRAM(R)-R(TM) embedded memory technology to Hitachi-IT. MoSys’
patented technology will enable Hitachi-IT to provide its customers
with high quality ASICs for high-end instrumentation incorporating
more than 50 Mb of embedded memory in a standard logic process. The
1T-SRAM-R technology has been proven to dramatically reduce soft error
rates (SERs) to fewer than 10 FIT/Mb in 0.13-micron process technology
resulting in improved system-level reliability at a low cost while
still maintaining the simple, industry-standard SRAM interface.

“MoSys’ 1T-SRAM-R is a valuable solution for embedding large
high-performance memories economically into SoC designs,” said Mr.
Yoshiteru Keikoin, senior chief engineer at Hitachi-IT. “MoSys’
1T-SRAM-R technology in collaboration with our leading edge system
concept, addresses our growing need for higher quality,
high-performance, low-power embedded memory with the cost advantages
that are necessary for today’s products.”

Hitachi-IT joins other announced licensees including National
Semiconductor, Philips Semiconductor and Motorola’s semiconductor
products sector in using 1T-SRAM-R in a range of applications that
require cost savings combined with the highest levels of quality and
reliability. The SoC chips will be manufactured using TSMC’s
0.13-micron standard logic process. Through the inclusion of patented
Transparent Error Correction(TM) (TEC(TM)) technology, 1T-SRAM-R
memory sets a new standard for quality of embedded memory.

“MoSys has demonstrated strong success in delivering its 1T-SRAM
technology with customers having already shipped more than 45 million
chips,” said Mark-Eric Jones, vice president and general manager of
intellectual property for MoSys. “Japan continues to be a powerful
market for MoSys and its 1T-SRAM technology across a wide range of
applications.”

ABOUT HITACHI-IT

Hitachi Information Technology Co., Ltd. (Hitachi-IT) is a
diversified high-tech business that develops and markets LSI, ASIC and
Board design services, among others. The company employs 1,700 people,
primarily located in Nakai, Kanagawa and Ohme-Tokyo in Japan and
generates about $400 million in revenue. More information is available
at http://www.hitachi-it.co.jp/english/default.htm.

ABOUT MOSYS

Founded in 1991, MoSys (Nasdaq:MOSY), develops, licenses and
markets innovative memory technologies for semiconductors. MoSys’
patented 1T-SRAM technologies offer a combination of high density, low
power consumption, high speed and low cost unmatched by other
available memory technologies. The single transistor bit cell used in
1T-SRAM technology results in the technology achieving much higher
density than traditional four or six transistor SRAMs while using the
same standard logic manufacturing processes. 1T-SRAM technologies also
offer the familiar, refresh-free interface and high performance for
random address access cycles associated with traditional SRAMs. In
addition, this technology can reduce operating power consumption by a
factor of four compared with traditional SRAM technology, contributing
to making it an ideal technology for embedding large memories in
System on Chip (SoC) designs. 1T-SRAM technology is in volume
production both in SoC products at MoSys’ licensees as well as in
MoSys’ standalone memories. MoSys is headquartered at 1020 Stewart
Drive, Sunnyvale, California 94085. More information is available on
MoSys’ Web site at http://www.mosys.com.

Note for Editors:

1T-SRAM(R) is a MoSys trademark registered in the U.S. Patent and
Trademark Office. All other trade, product, or servicenames referenced
in this release may be trademarks or registered trademarks of their
respective holders.

CONTACT: MoSys
K.T. Boyle, 408/731-1830
kboyle@mosys.com
or
Shelton PR
Katie Olivier, 972/239-5119 x128
kolivier@sheltongroup.com
or
Hitachi-IT
Yoshiteru Keikoin, +81-3-5338-0135
keikoin@hitachi-it.co.jp