Leading Electronics Company to Use MoSys’ Memory Technology for
Future Integrated Circuit Developments

SUNNYVALE, Calif.–(BUSINESS WIRE)–Nov. 11, 2002–
MoSys, Inc. (Nasdaq:MOSY) the leading provider of high density SoC
embedded memory solutions, today announced the licensing of MoSys’
1T-SRAM(R) embedded memory technology to Hitachi, Ltd. (NYSE:HIT), a
leading global electronics company.

Under the terms of the agreement, MoSys’ 1T-SRAM memory technology
will be embedded in Hitachi’s wide-range of semiconductor products.

“MoSys’ 1T-SRAM embedded memory offers higher density and lower
power consumption than other memory technologies, making it ideal for
use in our wide-range of semiconductor products,” said Norio Miyake,
general manager, System Solution Planning Dept., Semiconductor &
Integrated Circuits at Hitachi, Ltd. “MoSys’ 1T-SRAM-R(TM) memory
solution delivers Hitachi unique quality capabilities not found in
other memory technologies. This will enable us to develop
higher-quality chips, thus increasing our market leadership and
continuing to provide top-of-the-line electronics.”

Through this partnership, Hitachi joins a growing list of leading
semiconductor companies that have aligned with MoSys to develop
high-quality integrated circuits at a competitive price. “We are very
pleased to add Hitachi to the list of leading companies that have
licensed our 1T-SRAM memory technology,” said Mark-Eric Jones, vice
president and general manager of Intellectual Property at MoSys. “As
the proportion of integrated circuit die area occupied by embedded
memory continues to grow, selection of the correct memory technology
becomes one of the key decisions for IC designers. By choosing our
1T-SRAM-R embedded memory, Hitachi and their customers will take
advantage of the industry’s highest quality embedded memory solution.”


Founded in 1991, MoSys (Nasdaq:MOSY), develops, licenses and
markets innovative memory technologies for semiconductors. MoSys’
patented 1T-SRAM technologies offer a combination of high density, low
power consumption, high speed and low cost unmatched by other
available memory technologies. The single transistor bit cell used in
1T-SRAM technology results in the technology achieving much higher
density than traditional four or six transistor SRAMs while using the
same standard logic manufacturing processes. 1T-SRAM technologies also
offer the familiar, refresh-free interface and high performance for
random address access cycles associated with traditional SRAMs. In
addition, this technology can reduce operating power consumption by a
factor of four compared with traditional SRAM technology, contributing
to making it an ideal technology for embedding large memories in
System on Chip (SoC) designs. 1T-SRAM technology is in volume
production both in SoC products at MoSys’ licensees as well as in
MoSys’ standalone memories. MoSys is headquartered at 1020 Stewart
Drive, Sunnyvale, California 94085. More information is available on
MoSys’ website at https://dev-mosys-web-04-19.pantheonsite.io.


Hitachi, Ltd. (NYSE:HIT), headquartered in Tokyo, Japan, is a
leading global electronics company, with approximately 320,000
employees worldwide. Fiscal 2001 (ended March 31, 2002) consolidated
sales totaled 7,994 billion yen ($60.1 billion). The company offers a
wide range of systems, products and services in market sectors,
including information systems, electronic devices, power and
industrial systems, consumer products, materials and financial
services. For more information on Hitachi, please visit the company’s
Web site at http://global.hitachi.com.

Note for Editors:

1T-SRAM(R)is a MoSys trademark registered in the U.S. Patent and
Trademark Office. All other trade, product, or servicenames referenced
in this release may be trademarks or registered trademarks of their
respective holders.