Technology to Help Drive New Advances in IC Products for Innovative Consumer, Networking, Graphics Applications

SUNNYVALE, CA, May 23, 2007 (MARKET WIRE via COMTEX News Network) — MoSys, Inc. (NASDAQ: MOSY), the industry’s leading provider of
high-density system-on-chip (SoC) embedded memory intellectual
property (IP), today announced that NEC Electronics (TSE: 6723) has
licensed MoSys’ 1T-SRAM technology for use in the semiconductor
manufacturer’s cutting-edge 55-nm process. The combination of Mosys’
1T-SRAM and NEC Electronics’ 55-nm embedded DRAM process technology
can produce integrated circuit (IC) devices with the low cost and low
power consumption characteristics needed to enable next-generation
consumer products. The high-speed attributes of the MoSys 1T-SRAM also
enables the technology to address high-performance networking and
graphics applications.

“The move to 55-nm is further evidence of the rapid scalability of
our 1T-SRAM technology. We have been able to continuously scale this
technology from 250nm to the current 55nm node. We will continue to
rapidly scale to 45nm and beyond,” said Chet Silvestri, president and
CEO of MoSys. “This scalability ensures our customers will have access
to our high density memory technology in the industry’s most advanced
process technologies. Extending our partnership with NEC Electronics
to include 55nm is an important milestone in delivering on this

About MoSys Inc.

Founded in 1991, MoSys (NASDAQ: MOSY) develops, licenses and markets
industry-leading embedded memory IP for semiconductors. MoSys
patented 1T-SRAM offers a combination of high density, low power
consumption, high speed and low cost unmatched by other memory
technologies. MoSys licensees have shipped more than 110 million
chips incorporating 1T-SRAM, demonstrating excellent
manufacturability in a wide range of silicon processes and
applications. MoSys is headquartered in Silicon Valley with a design
center in Korea. More information is available at

Tara Sims
415 310 5779
Contact via
Communications, MoSys

SOURCE: MoSys, Inc.