eSilicon’s ASIC customers gain access to 1T-SRAM technology

SUNNYVALE AND SANTA CLARA, CALIFORNIA (February 28, 2002) -MoSys, Inc. (NASDAQ: MOSY) the industry’s leading provider of high density SoC embedded memory solutions and eSilicon Corporation, a full service provider of application-specific integrated circuits (ASICs), today announced the licensing of MoSys’® 1T-SRAM® embedded memory technology to be incorporated into eSilicon™ customer’s ASIC designs. eSilicon manages every stage of the ASIC development process, from specification through manufacturing and delivery of packaged, tested ICs — with an eBusiness infrastructure that provides significant cost and time to market advantage.

“Our ASIC customers and engineering team evaluated MoSys’ 1T-SRAM embedded memory technology and selected MoSys for its performance, density and power capabilities not available from other embedded memory technologies,” said Prasad Subramaniam, vice president of design technology at eSilicon. “By using the MoSys’ 1T-SRAM embedded memory, our ASIC customers will achieve compelling silicon die area reductions and manufacturing cost savings.”

To date, the MoSys 1T-SRAM technology has been silicon-proven in five process generations and is in volume production in four process generations. Communications and consumer product developers have benefited from MoSys’ ultra dense high performance 1T-SRAM memory.

“eSilicon has pioneered the fabless ASIC business model with their netlist and SmartCOT offerings to customers in a number of market segments,” noted Mark-Eric Jones, vice president and general manager of intellectual property at MoSys. “We are very pleased that eSilicon and their ASIC customer have chosen MoSys’ 1T-SRAM technology as it continues its steady rollout of products for the communication market.”


Founded in 1991, MoSys (NASDAQ: MOSY), develops, licenses and markets innovative memory technology for semiconductors. MoSys’ patented 1T-SRAM technology offers a combination of high density, low power consumption, high speed and low cost unmatched by other available memory technologies. The single transistor bit cell used in 1T-SRAM technology results in the technology achieving much higher density than traditional four or six transistor SRAMs while using the same standard logic manufacturing processes. 1T-SRAM technology also offers the familiar, refresh-free interface and high performance for random address access cycles associated with traditional SRAMs. In addition, this technology can reduce operating power consumption by a factor of four compared with traditional SRAM technology, contributing to making it an ideal technology for embedding large memories in System on Chip (SoC) designs. 1T-SRAM technology is in volume production both in SoC products at MoSys’ licensees as well as in MoSys’ standalone memories. MoSys is headquartered at 1020 Stewart Drive, Sunnyvale, California 94085. More information is available on MoSys’ website at


eSilicon Corporation is a full-service provider of application specific integrated circuits (ASICs) to the world’s leading electronics companies. Our unique fabless approach manages every step of the IC development process — from specification through manufacturing and delivery of packaged and tested parts. eSilicon offers value-added design and manufacturing expertise, with an eBusiness infrastructure that provides significant visibility, predictability and time-to-market advantages. We ensure a high quality, full support customer experience that results in the fastest and most cost effective path to silicon for companies of all sizes. Headquartered in Santa Clara, CA with offices in Allentown, PA, and Bedminster, NJ, eSilicon has approximately 60 employees. For more information about eSilicon, visit

Note for Editors:

1T-SRAM® is a MoSys trademark registered in the U.S. Patent and Trademark Office. eSilicon and the eSilicon logo are trademarks of eSilicon Corporation. . All other trade, product, or service names referenced in this release may be trademarks or registered trademarks of their respective holders.