Ultra-dense memory technology to be used initially in 0.13-micron standard logic process for cellular infrastructure ASIC/SoC solutions.

SUNNYVALE, Calif. (April 18, 2002) -MoSys, Inc. (NASDAQ: MOSY) the industry’s leading provider of high density SoC embedded memory solutions, today announced the licensing of MoSys’ 1T-SRAM® embedded memory technology to the semiconductor division of Philips (NYSE: PHG). The 1T-SRAM embedded memory technology will be used for Philips’ cellular infrastructure ASICs/SoCs, enabling the incorporation of high performance, high density embedded memory blocks.

“The 1T-SRAM embedded memory was evaluated according to our cellular infrastructure customer requirements, and we selected MoSys technology for its unique performance, density and power capabilities not available from other standard SRAM technologies,” said Malcolm Spencer, general manager Cellular Infrastructure business line at Philips Semiconductors. “By using the MoSys’ 1T-SRAM embedded memory, our customers will benefit from the high density and production-proven advantages of this technology.”

The license agreement will initially be used for products built in the 0.13-micron process generation using MoSys’ recently announced 1T-SRAM-R(TM) technology that incorporates Transparent Error Correction(TM) to eliminate the need for the laser repair manufacturing step while providing improved soft error rate, yield and reliability compared to other embedded memory technologies.

“We are very pleased that the MoSys’1T-SRAM technology was chosen by the Cellular Infrastructure business line of Philips Semiconductors,” said Mark-Eric Jones, vice president and general manager of intellectual property at MoSys. “Our 1T-SRAM technology has been proven in volume production to offer cost savings, quality and reliability improvements that cannot be matched by other embedded memory technologies. As the proportion of SoC die area occupied by memory continues to grow these benefits translate to dramatic advantages for the whole SoC.”

To date, 1T-SRAM embedded memory technology at MoSys licensees has passed 20 million units currently in production. These shipped devices represent a total of over one billion megabits (1,000,000,000,000,000 bits) of 1T-SRAM embedded memory now in use by licensees and their customers.


Founded in 1991, MoSys (NASDAQ: MOSY), develops, licenses and markets innovative memory technology for semiconductors. MoSys’ patented 1T-SRAM technology offers a combination of high density, low power consumption, high speed and low cost unmatched by other available memory technologies. The single transistor bit cell used in 1T-SRAM technology results in the technology achieving much higher density than traditional four or six transistor SRAMs while using the same standard logic manufacturing processes. 1T-SRAM technology also offers the familiar, refresh-free interface and high performance for random address access cycles associated with traditional SRAMs. In addition, this technology can reduce operating power consumption by a factor of four compared with traditional SRAM technology, contributing to making it an ideal technology for embedding large memories in System on Chip (SoC) designs. 1T-SRAM technology is in volume production both in SoC products at MoSys’ licensees as well as in MoSys’ standalone memories. MoSys is headquartered at 1020 Stewart Drive, Sunnyvale, California 94085. More information is available on MoSys’ website at www.mosys.com.

Note for Editors:

1T-SRAM® is a MoSys trademark registered in the U.S. Patent and Trademark Office. All other trade, product, or service names referenced in this release may be trademarks or registered trademarks of their respective holders.